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參數資料
| 型號： | CY7C1046CV33-12VI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 1M x 4 Static RAM |
| 中文描述： | 1M X 4 STANDARD SRAM, 12 ns, PDSO32 |
| 封裝： | 0.400 INCH, SOJ-32 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 161K |
| 代理商： | CY7C1046CV33-12VI |
1M x 4 Static RAM
CY7C1046CV33
Cypress Semiconductor Corporation
Document #: 38-05003 Rev. *A
3901 North First Street
San Jose
CA 95134
Revised September 13, 2002
408-943-2600
Features
High speed
—t
AA
= 10ns
Low active power for 10 ns speed
—324 mW (max.)
2.0V data retention
Automatic power-down when deselected
TTL-compatible inputs and outputs
Easy memory expansion with CE and OE features
Functional Description
[1]
The CY7C1046CV33 is a high-performance CMOS static
RAM organized as 1,048,576 words by 4 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE), an
active LOW Output Enable (OE), and three-state drivers.
Logic Block Diagram
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. Data on the four I/O
pins (I/O
0
through I/O
3
) is then written into the location
specified on the address pins (A
0
through A
19
).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the I/O pins.
The four input/output pins (I/O
0
through I/O
3
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a Write
operation (CE LOW, and WE LOW).
The CY7C1046CV33 is available in a standard 400-mil-wide
32-pin SOJ package with center power and ground (revolu-
tionary) pinout.
1
A
1
A
Pin Configuration
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
10
COLUMN
DECODER
R
S
INPUT BUFFER
POWER
DOWN
WE
OE
I/O
0
I/O
1
1M x 4
ARRAY
I/O
3
I/O
2
A
0
A
1
A
1
A
1
CE
A
1
A
1
1
2
3
4
5
6
7
8
9
10
11
12
13
21
20
22
25
24
23
28
27
26
Top View
SOJ
29
32
31
30
14
15
19
18
GND
I/O
1
A
1
A
2
A
3
A
4
CE
A
5
A
6
A
7
A
8
A
9
WE
V
CC
I/O
2
A
18
A
17
A
16
A
15
OE
I/O
3
A
12
A
11
A
14
A
13
A
0
I/O
0
V
CC
A
1
16
17
GND
A
10
NC
A
19
A
1
Selection Guide
-8
[2]
8
100
10
-10
10
90
10
-12
12
85
10
-15
15
80
10
Unit
ns
mA
mA
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
Notes:
1.
For guidelines on SRAM system design, please refer to the
‘
System Design Guidelines
’
Cypress application note, available on the internet at www.cypress.com.
2.
Shaded areas contain advance information.
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| CY7C1046CV33-15VC | 1M x 4 Static RAM |
| CY7C1046CV33-15VI | 1M x 4 Static RAM |
| CY7C1046CV33-10VC | 1M x 4 Static RAM |
| CY7C1046DV33 | 4-Mbit (1M x 4) Static RAM |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| CY7C1046CV33-12VXC | 功能描述:IC SRAM 4MBIT 12NS 32SOJ RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C1046CV33-15VC | 制造商:Rochester Electronics LLC 功能描述:4MB (1M X 4)- FAST ASYNCH SRAM - Bulk 制造商:Cypress Semiconductor 功能描述: |
| CY7C1046CV33-15VI | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 1M x 4-Bit 15ns 32-Pin SOJ |
| CY7C1046D-10VXI | 功能描述:靜態隨機存取存儲器 4M FAST ASYNC HI SPD IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1046D-10VXIT | 功能描述:靜態隨機存取存儲器 4M FAST ASYNC HI SPD IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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