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參數資料
| 型號： | CY7C1049L-20VC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | BACKSHELL, MDR, 20WAY, METAL; For use with:Mini D Ribbon 101XX-6000 EC Plug Connectors; Material:Aluminum; Colour:Nickel; Connector type:Backshell; Ways, No. of:20 RoHS Compliant: Yes |
| 中文描述： | 512K X 8 STANDARD SRAM, 20 ns, PDSO36 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-36 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 128K |
| 代理商： | CY7C1049L-20VC |
PRELIMINARY
512K x 8 Static RAM
CY7C1049
Cypress Semiconductor Corporation
Document #: 38-05063 Rev. **
3901 North First Street
San Jose
CA 95134
408-943-2600
Revised August 31, 2001
049
Features
High speed
—t
AA
= 15 ns
Low active power
—1210 mW (max.)
Low CMOS standby power (Commercial L version)
—2.75 mW (max.)
2.0V Data Retention (400
μ
W at 2.0V retention)
Automatic power-down when deselected
TTL-compatible inputs and outputs
Easy memory expansion with CE and OE features
Functional Description
The CY7C1049 is a high-performance CMOS static RAM or-
ganized as 524,288 words by 8 bits. Easy memory expansion
Logic Block Diagram
is provided by an active LOW chip enable (CE), an active LOW
output enable (OE), and three-state drivers. Writing to the de-
vice is accomplished by taking chip enable (CE) and write en-
able (WE) inputs LOW. Data on the eight I/O pins (I/O
0
through
I/O
7
) is then written into the location specified on the address
pins (A
0
through A
18
).
Reading from the device is accomplished by taking chip en-
able (CE) and output enable (OE) LOW while forcing write en-
able (WE) HIGH. Under these conditions, the contents of the
memory location specified by the address pins will appear on
the I/O pins.
The eight input/output pins (I/O
0
through I/O
7
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW, and WE LOW).
The CY7C1049 is available in a standard 400-mil-wide 36-pin
SOJ package with center power and ground (revolutionary)
pinout.
Pin Configuration
1
A
1
A
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
10
COLUMN
DECODER
R
S
INPUT BUFFER
POWER
DOWN
WE
OE
I/O
0
I/O
1
I/O
2
I/O
3
512K x 8
ARRAY
I/O
7
I/O
6
I/O
5
I/O
4
A
0
A
1
A
1
A
1
CE
A
1
A
1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
23
22
24
28
27
26
25
29
32
31
30
Top View
SOJ
33
36
35
34
16
17
21
20
GND
I/O
2
I/O3
A
1
A
2
A
3
A
4
CE
A
5
A
6
A
7
A
8
A
9
WE
V
CC
I/O
5
I/O
4
A
18
A
17
A
16
A
15
OE
I/O
7
I/O
6
A
12
A
11
A
14
A
13
1049
–
1
A
0
I/O
0
I/O
1
V
CC
1049
–
2
A
1
18
19
GND
A
10
NC
NC
Selection Guide
7C1049-12
12
240
8
0.5
9
7C1049-15
15
220
8
0.5
9
7C1049-17
17
195
8
0.5
9
7C1049-20
20
185
8
0.5
9
10
7C1049-25
25
180
8
0.5
9
10
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum CMOS Standby
Current (mA)
Com
’
l
Com
’
l
Ind
’
l
Military
L
Shaded areas contain advance information.
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| CY7C1051DV33-10BAXI | 功能描述:靜態隨機存取存儲器 8MB (512Kx16) 3.3v 10ns Fast Async 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1051DV33-10BAXIT | 功能描述:靜態隨機存取存儲器 8M FAST ASYNC HI SPD 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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