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參數資料
型號: CY7C1319V18
英文描述: Memory
中文描述: 內存
文件頁數: 1/9頁
文件大小: 194K
代理商: CY7C1319V18
128K x 8 Static RAM
CY7C1019B/
CY7C10191B
Cypress Semiconductor Corporation
3901 North First Street
San Jose
CA 95134
408-943-2600
Document #: 38-05026 Rev. *A
Revised August 13, 2002
C1019V33
Features
High speed
—tAA = 10, 12, 15 ns
CMOS for optimum speed/power
Center power/ground pinout
Automatic power-down when deselected
Easy memory expansion with CE and OE options
Functionally equivalent to CY7C1019
Functional Description
The CY7C1019B/10191B is a high-performance CMOS static
RAM organized as 131,072 words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE), an
active LOW Output Enable (OE), and three-state drivers. This
device has an automatic power-down feature that significantly
reduces power consumption when deselected.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. Data on the eight I/O
pins (I/O0 through I/O7) is then written into the location speci-
fied on the address pins (A0 through A16).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the I/O pins.
The eight input/output pins (I/O0 through I/O7) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW, and WE LOW).
The CY7C1019B/10191B is available in standard 32-pin
TSOP Type II and 400-mil-wide SOJ packages. Customers
should use part number CY7C10191B when ordering parts
with 10 ns tAA, and CY7C1019B when ordering 12 and 15 ns
tAA.
14
15
ogic Block Diagram
Pin Configurations
A1
A2
A3
A4
A5
A6
A7
A8
COLUMN
DECODER
ROW
DEC
O
D
E
R
SE
NSE
A
M
PS
INPUT BUFFER
POWER
DOWN
WE
OE
I/O0
I/O1
I/O2
I/O3
512 x 256 x 8
ARRAY
I/O7
I/O6
I/O5
I/O4
A0
A
11
A
13
A
12
A
10
CE
A
16
A
9
1
2
3
4
5
6
7
8
9
10
11
14
19
20
24
23
22
21
25
28
27
26
Top View
SOJ
12
13
29
32
31
30
16
15
17
18
A7
A1
A2
A3
CE
I/O0
I/O1
VCC
A13
A16
A15
OE
I/O7
I/O6
A12
A11
A10
A9
I/O2
A0
A4
A5
A6
I/O4
VCC
I/O5
A8
I/O3
WE
VSS
A14
V
SS
/ TSOPII
相關PDF資料
PDF描述
CY7C132 Memory
CY7C1320V18 Memory
CY7C1321V18 Memory
CY7C132-25DC x8 Dual-Port SRAM
CY7C132-25LC x8 Dual-Port SRAM
相關代理商/技術參數
參數描述
CY7C131A-15JXI 功能描述:靜態隨機存取存儲器 1Kx8 55ns 8Kb DUAL PORT 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C131AE-15JXI 功能描述:靜態隨機存取存儲器 CY7C131AE-15JXI RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C131E-15NXI 功能描述:靜態隨機存取存儲器 CY7C131E-15NXI RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C131E-25JXC 功能描述:靜態隨機存取存儲器 CY7C131E-25JXC RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C131E-25JXCT 功能描述:靜態隨機存取存儲器 CY7C131E-25JXCT RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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