- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄380193 > CY7C1362B-200AI (CYPRESS SEMICONDUCTOR CORP) MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.02]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1500; toff (µs) typ: 0.11; Package: DPAK (S) PDF資料下載
參數(shù)資料
| 型號(hào)： | CY7C1362B-200AI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類(lèi)： | DRAM |
| 英文描述： | MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.02]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1500; toff (µs) typ: 0.11; Package: DPAK (S) |
| 中文描述： | 512K X 18 CACHE SRAM, 3 ns, PQFP100 |
| 封裝： | 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 |
| 文件頁(yè)數(shù)： | 1/34頁(yè) |
| 文件大小： | 901K |
| 代理商： | CY7C1362B-200AI |
當(dāng)前第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)
9-Mbit (256K x 36/512K x 18) Pipelined SRAM
CY7C1360B
CY7C1362B
Cypress Semiconductor Corporation
Document #: 38-05291 Rev. *C
3901 North First Street
San Jose
,
CA 95134
408-943-2600
Revised April 9, 2004
Features
Supports bus operation up to 225 MHz
Available speed grades are 225, 200 and 166 MHz
Registered inputs and outputs for pipelined operation
3.3V core power supply
2.5V/3.3V I/O operation
Fast clock-to-output times
— 2.8 ns (for 225-MHz device)
— 3.0 ns (for 200-MHz device)
— 3.5 ns (for 166-MHz device)
Provide high-performance 3-1-1-1 access rate
User-selectable burst counter supporting Intel
Pentium
interleaved or linear burst sequences
Separate processor and controller address strobes
Synchronous self-timed writes
Asynchronous output enable
Single Cycle Chip Deselect
Offered in JEDEC-standard 100-pin TQFP, 119-ball BGA
and 165-Ball fBGA packages
TQFP Available with 3-Chip Enable and 2-Chip Enable
IEEE 1149.1 JTAG-Compatible Boundary Scan
“ZZ” Sleep Mode Option
Functional Description
[1]
The CY7C1360B/CY7C1362B SRAM integrates 262,144 x 36
and 524,288 x 18 SRAM cells with advanced synchronous
peripheral circuitry and a two-bit counter for internal burst
operation. All synchronous inputs are gated by registers
controlled by a positive-edge-triggered Clock Input (CLK). The
synchronous inputs include all addresses, all data inputs,
address-pipelining Chip Enable (CE
), depth-expansion Chip
Enables (CE
2
and
CE
3[2]
), Burst Control inputs (ADSC, ADSP,
and ADV), Write Enables (BW
, and BWE), and Global Write
(GW). Asynchronous inputs include the Output Enable (OE)
and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to two or four bytes wide as
controlled by the Byte Write control inputs. GW when active
LOW causes all bytes to be written.
The CY7C1360B/CY7C1362B operates from a +3.3V core
power supply while all outputs may operate with either a +2.5
or +3.3V supply. All inputs and outputs are JEDEC-standard
JESD8-5-compatible.
Selection Guide
225 MHz
2.8
250
30
200 MHz
3.0
220
30
166 MHz
3.5
180
30
Unit
ns
mA
mA
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
Shaded areas contain advance information. Please contact your local Cypress sales representative for availability of these parts.
Notes:
1. For best-practices recommendations, please refer to the Cypress application note
System Design Guidelines
on www.cypress.com.
2. CE
3
is for A version of TQFP (3 Chip Enable option) and 165 fBGA package only. 119 BGA is offered only in 2 Chip Enable.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1362B-200AJC | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM |
| CY7C1362B-200AJI | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM |
| CY7C1362B-200BGC | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM |
| CY7C1360C-200BGXC | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM |
| CY7C1360C | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1362C-166AJXC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx18 3.3V COM Sync PL 1CD 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1362C-166AJXCT | 功能描述:IC SRAM 9MBIT 166MHZ 100LQFP RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱(chēng):557-1327-2 |
| CY7C1362C-166AXC | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Dual 3.3V 9M-Bit 512K x 18 3.5ns 100-Pin TQFP |
| CY7C1362C-166BZC | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY7C1362C-200AJXC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx18 3.3V COM Sync PL 1CD 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。