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參數(shù)資料
| 型號： | CY7C1363A-133AJI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 256K x 36/512K x 18 Synchronous Flow-Thru Burst SRAM |
| 中文描述： | 512K X 18 STANDARD SRAM, 7 ns, PQFP100 |
| 封裝： | 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 |
| 文件頁數(shù)： | 1/26頁 |
| 文件大小： | 831K |
| 代理商： | CY7C1363A-133AJI |
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256K x 36/512K x 18 Synchronous
Flow-Thru Burst SRAM
CY7C1361A
CY7C1363A
Cypress Semiconductor Corporation
Document #: 38-05259 Rev. *A
3901 North First Street
San Jose
CA 95134
408-943-2600
Revised June 19, 2002
Features
Fast access times: 6.0, 6.5, 7.0, and 8.0ns
Fast clock speed: 150, 133, 117, and 100MHz
Fast OE access times: 3.5 ns and 4.0 ns
Optimal for depth expansion (one cycle chip deselect
to eliminate bus contention)
3.3V –5% and +10% power supply
3.3V or 2.5V I/O supply
5V tolerant inputs except I/Os
Clamp diodes to V
SS
at all inputs and outputs
Common data inputs and data outputs
Byte Write Enable and Global Write control
Multiple chip enables for depth expansion: A package
version and two chip enables for BG and AJ package
versions
Address pipeline capability
Address, data, and control registers
Internally self-timed Write cycle
Burst control pins (interleaved or linear burst
sequence)
Automatic power-down feature available using ZZ
mode or CE deselect.
JTAG boundary scan for BG and AJ package version
Low-profile 119-bump 14-mm × 22-mm PBGA (Ball Grid
Array) and 100-pin TQFP packages
Functional Description
The Cypress Synchronous Burst SRAM family employs
high-speed, low-power CMOS designs using advanced
triple-layer polysilicon, double-layer metal technology. Each
memory cell consists of four transistors and two high-valued
resistors.
The CY7C1361A and CY7C1363A SRAMs integrate 262,144
×
36 and 524,288
×
18 SRAM cells with advanced
synchronous peripheral circuitry and a two-bit counter for
internal burst operation. All synchronous inputs are gated by
registers controlled by a positive-edge-triggered Clock Input
(CLK). The synchronous inputs include all addresses, all data
inputs, address-pipelining Chip Enable (CE), depth-expansion
Chip Enables (CE
2
and CE
2
), burst control inputs (ADSC,
ADSP, and ADV), Write Enables (BWa, BWb, BWc, BWd, and
BWE), and global Write (GW). However, the CE
2
chip enable
input is only available for the TA package version.
Asynchronous inputs include the Output Enable (OE) and
burst mode control (MODE). The data outputs (Q), enabled by
OE, are also asynchronous.
Addresses and chip enables are registered with either
Address Status Processor (ADSP) or Address Status
Controller (ADSC) input pins. Subsequent burst addresses
can be internally generated as controlled by the Burst Advance
Pin (ADV).
Address, data inputs, and Write controls are registered on-chip
to initiate self-timed Write cycle. Write cycles can be one to
four bytes wide as controlled by the Write control inputs.
Individual byte Write allows individual byte to be written. BWa
controls DQa. BWb controls DQb. BWc controls DQc. BWd
controls DQd. BWa, BWb, BWc, and BWd can be active only
with BWE being LOW. GW being LOW causes all bytes to be
written. The x18 version only has 18 data inputs/outputs (DQa
and DQb) along with BWa and BWb (no BWc, BWd, DQc, and
DQd).
For the B and T package versions, four pins are used to
implement JTAG test capabilities: Test Mode Select (TMS),
Test Data-In (TDI), Test Clock (TCK), and Test Data-Out
(TDO). The JTAG circuitry is used to serially shift data to and
from the device. JTAG inputs use LVTTL/LVCMOS levels to
shift data during this testing mode of operation. The TA
package version does not offer the JTAG capability.
The CY7C1361A and CY7C1363A operate from a +3.3V
power supply. All inputs and outputs are LVTTL-compatible.
Selection Guide
7C1361A-150
7C1363A-150
6.0
480
10
7C1361A-133
7C1363A-133
6.5
360
10
7C1361A-117
7C1363A-117
7.0
320
10
7C1361A-100
7C1363A-100
8.0
270
10
Unit
ns
mA
mA
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1363A-133BGI | 256K x 36/512K x 18 Synchronous Flow-Thru Burst SRAM |
| CY7C1361B | 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM |
| CY7C1361B-117AI | 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM |
| CY7C1363B-117AC | 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM |
| CY7C1362A-150BGI | 256K x 36/512K x 18 Synchronous Pipelined Burst SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1363A-150AJC | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Cypress Semiconductor 功能描述: |
| CY7C1363A-150BGC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1363B-100AC | 功能描述:IC SRAM 9MBIT 100MHZ 100LQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
| CY7C1363B-117AJC | 制造商:Rochester Electronics LLC 功能描述:8M- 512KX18 3.3V FLOW-THROUGH-SYNCHRONOUS SRAM - Bulk 制造商:Cypress Semiconductor 功能描述: |
| CY7C1363B-117BGC | 制造商:Cypress Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述:8M- 512KX18 3.3V FLOW-THROUGH-SYNCHRONOUS SRAM - Bulk |
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