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參數資料
| 型號： | CY7C1382C-225BZC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 18-Mb (512K x 36/1M x 18) Pipelined SRAM |
| 中文描述： | 1M X 18 CACHE SRAM, 2.8 ns, PBGA165 |
| 封裝： | 13 X 15 MM, 1.20 MM HEIGHT, FBGA-165 |
| 文件頁數： | 1/36頁 |
| 文件大小： | 788K |
| 代理商： | CY7C1382C-225BZC |
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18-Mb (512K x 36/1M x 18) Pipelined SRAM
CY7C1380C
CY7C1382C
Cypress Semiconductor Corporation
Document #: 38-05237 Rev. *D
3901 North First Street
San Jose
,
CA 95134
408-943-2600
Revised February 26, 2004
Features
Supports bus operation up to 250 MHz
Available speed grades are 250, 225, 200,166 and
133MHz
Registered inputs and outputs for pipelined operation
3.3V core power supply
2.5V / 3.3V I/O operation
Fast clock-to-output times
— 2.6 ns (for 250-MHz device)
— 2.8 ns (for 225-MHz device)
— 3.0 ns (for 200-MHz device)
— 3.4 ns (for 166-MHz device)
— 4.2 ns (for 133-MHz device)
Provide high-performance 3-1-1-1 access rate
User-selectable burst counter supporting Intel
Pentium interleaved or linear burst sequences
Separate processor and controller address strobes
Synchronous self-timed writes
Asynchronous output enable
Single Cycle Chip Deselect
Offered in JEDEC-standard 100-pin TQFP, 119-ball BGA
and 165-Ball fBGA packages
IEEE 1149.1 JTAG-Compatible Boundary Scan
“ZZ” Sleep Mode Option
Functional Description
[1]
The CY7C1380C/CY7C1382C SRAM integrates 524,288 x 36
and 1,048,576 x 18 SRAM cells with advanced synchronous
peripheral circuitry and a two-bit counter for internal burst
operation. All synchronous inputs are gated by registers
controlled by a positive-edge-triggered Clock Input (CLK). The
synchronous inputs include all addresses, all data inputs,
address-pipelining Chip Enable (CE
), depth-expansion Chip
Enables (CE
2
and
CE
3 [2]
), Burst Control inputs (ADSC, ADSP,
and ADV), Write Enables (BW
, and BWE), and Global Write
(GW). Asynchronous inputs include the Output Enable (OE)
and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to two or four bytes wide as
controlled by the byte write control inputs. GW when active
LOW causes all bytes to be written.
The CY7C1380C/CY7C1382C operates from a +3.3V core
power supply while all outputs may operate with either a +2.5
or +3.3V supply. All inputs and outputs are JEDEC-standard
JESD8-5-compatible.
Selection Guide
250 MHz
2.6
350
70
225 MHz
2.8
325
70
200 MHz
3.0
300
70
167 MHz
3.4
275
70
133 MHz
4.2
245
70
Unit
ns
mA
mA
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
Shaded areas contain advance information.
Please contact your local Cypress sales representative for availability of these parts.
Notes:
1. For best–practices recommendations, please refer to the Cypress application note
System Design Guidelines
on www.cypress.com.
2. CE
3
, CE
2
are for TQFP and 165 fBGA package only. 119 BGA is offered only in 1 Chip Enable.
相關PDF資料 |
PDF描述 |
|---|---|
| CY7C1382C-250AC | 18-Mb (512K x 36/1M x 18) Pipelined SRAM |
| CY7C1382C-250BGC | 18-Mb (512K x 36/1M x 18) Pipelined SRAM |
| CY7C1382C-250BZC | 18-Mb (512K x 36/1M x 18) Pipelined SRAM |
| CY7C1380C-250BZC | PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes |
| CY7C1380C-200BZC | Rocker Switch; Circuitry:SPST; Switch Operation:On-Off; Contact Current Max:10A; Contact Rating:10A; Leaded Process Compatible:Yes; Mounting Type:PCB; Switch Features:Rocker Actuator; Switch Function:SPST |
相關代理商/技術參數 |
參數描述 |
|---|---|
| CY7C1382D-167AXC | 功能描述:靜態隨機存取存儲器 1Mx18 3.3V COM 1CD Sync PL 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1382D-167AXC | 制造商:Cypress Semiconductor 功能描述:IC SRAM 18MBIT PARALLEL 3.4NS TQFP100 |
| CY7C1382D-167AXCT | 功能描述:IC SRAM 18MBIT 167MHZ 100LQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C1382D-200AXC | 功能描述:靜態隨機存取存儲器 1Mx18 3.3V COM 1CD Sync PL 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1382D-200AXCT | 功能描述:IC SRAM 18MBIT 200MHZ 100LQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
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