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參數資料
| 型號： | CY7C1383B-83BZI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 512 】 36/1M 】 18 Flow-Thru SRAM |
| 中文描述： | 1M X 18 STANDARD SRAM, 10 ns, PBGA165 |
| 封裝： | 13 X 15 MM, 1.20 MM HEIGHT, FBGA-165 |
| 文件頁數： | 1/31頁 |
| 文件大?。?/td> | 613K |
| 代理商： | CY7C1383B-83BZI |
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512 × 36/1M × 18 Flow-Thru SRAM
internal burst operation. All synchronous inputs are gated by
registers controlled by a positive-edge-triggered clock input
(CLK). The synchronous inputs include all addresses, all data
inputs, address-pipelining Chip Enable (CE), Burst Control
Inputs (ADSC, ADSP, and ADV), Write Enables (BWa, BWb,
BWc, BWd, and BWe), and Global Write (GW).
Asynchronous inputs include the Output Enable (OE) and
Burst Mode Control (MODE). The data outputs (Q), enabled
by OE, are also asynchronous.
Addresses and chip enables are registered with either
Address Status Processor (ADSP) or address status controller
(ADSC) input pins. Subsequent burst addresses can be inter-
nally generated as controlled by the Burst Advance Pin (ADV).
Address, data inputs, and Write controls are registered on-chip
to initiate self-timed Write cycle. Write cycles can be one to
four bytes wide as controlled by the Write control inputs.
Individual byte Write allows individual byte to be written. BWa
controls DQ1-DQ8 and DP1. BWb controls DQ9-DQ16 and
DP2. BWc controls DQ17-DQ24and DP3. BWd controls
DQ25-DQ32 and DP4. BWa, BWb BWc, and BWd can be
active only with BWe being LOW. GW being LOW causes all
bytes to be written. Write pass-through capability allows
written data available at the output for the immediately next
Read cycle. This device also incorporates pipelined enable
circuit for easy depth expansion without penalizing system
performance.
All inputs and outputs of the CY7C1381B and the CY7C1383B
are JEDEC-standard JESD8-5-compatible.
CY7C1381B
CY7C1383B
Cypress Semiconductor Corporation
Document #: 38-05196 Rev. **
3901 North First Street
San Jose
CA 95134
Revised December 3, 2001
408-943-2600
381B
Features
Fast access times: 7.5, 8.5, 10.0 ns
Fast clock speed: 117, 100, 83 MHz
Provide high-performance 3-1-1-1 access rate
Optimal for depth expansion
3.3V (
–
5% / +10%) power supply
Common data inputs and data outputs
Byte Write Enable and Global Write control
Chip enable for address pipeline
Address, data and control registers
Internally self-timed Write Cycle
Burst control pins (interleaved or linear burst
sequence)
Automatic power down available using ZZ mode or CE
deselect
High-density, high-speed packages
JTAG boundary scan for BGA packaging version
Functional Description
The Cypress Synchronous Burst SRAM family employs
high-speed, low power CMOS designs using advanced
single-layer polysilicon, triple-layer metal technology. Each
memory cell consists of six transistors.
The CY7C1381B and CY7C1383B SRAMs integrate
524,288
×
36 and 1,048,576
×
18 SRAM cells with advanced
synchronous peripheral circuitry and a 2-bit counter for
Selection Guide
117 MHz
100 MHz
83 MHz
Unit
Maximum Access Time
7.5
8.5
10.0
ns
Maximum Operating Current
250
225
185
mA
Maximum CMOS Standby Current
20
20
20
mA
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| CY7C1383BV25-100AC | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Cypress Semiconductor 功能描述: |
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| CY7C1383C-100AC | 功能描述:IC SRAM 18MBIT 100MHZ 100LQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP 包裝:托盤 |
| CY7C1383D-100AXC | 功能描述:IC SRAM 18MBIT 100MHZ 100LQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP 包裝:托盤 |
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