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參數(shù)資料
| 型號： | CY7C1399-20VI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 32K x 8 3.3V Static RAM |
| 中文描述： | 32K X 8 CACHE SRAM, 20 ns, PDSO28 |
| 封裝： | 0.300 INCH, PLASTIC, SOJ-28 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 236K |
| 代理商： | CY7C1399-20VI |
32K x 8 3.3V Static RAM
CY7C1399
Cypress Semiconductor Corporation
3901 North First Street
San Jose
CA 95134
408-943-2600
March 25, 1999
Features
Single 3.3V power supply
Ideal for low-voltage cache memory applications
High speed
—12/15 ns
Low active power
—255 mW (max.)
Low CMOS standby power (L)
—
180
μ
W (max.), f=f
MAX
2.0V data retention (L)
—
40
μ
W
Low-power alpha immune 6T cell
Plastic SOJ and TSOP packaging
Functional Description
The CY7C1399 is a high-performance 3.3V CMOS Static RAM
organized as 32,768 words by 8 bits. Easy memory expansion
is provided by an active LOW Chip Enable (CE) and active
LOW Output Enable (OE) and three-state drivers. The device
has an automatic power-down feature, reducing the power
consumption by more than 95% when deselected.
An active LOW Write Enable signal (WE) controls the writing/
reading operation of the memory. When CE and WE inputs
are both LOW, data on the eight data input/output pins (I/O
0
through I/O
7
) is written into the memory location addressed by
the address present on the address pins (A
0
through A
14
).
Reading the device is accomplished by selecting the device
and enabling the outputs, CE and OE active LOW, while WE
remains inactive or HIGH. Under these conditions, the con-
tents of the location addressed by the information on address
pins is present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and Write Enable
(WE) is HIGH. The CY7C1399 is available in 28-pin standard
300-mil-wide SOJ and TSOP Type I packages.
Logic Block Diagram
Pin Configurations
C1399–1
C1399–2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
20
19
18
17
21
24
23
22
Top View
SOJ
25
28
27
26
GND
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
A
14
I/O
0
I/O
1
I/O
2
WE
A
4
A
3
A
2
A
1
OE
A
0
V
CC
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
A
5
CE
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
COLUMN
DECODER
R
S
INPUT BUFFER
POWER
DOWN
WE
OE
I/O
0
CE
I/O
1
I/O
2
I/O
3
32K x 8
ARRAY
I/O
7
I/O
6
I/O
5
I/O
4
A
0
A
1
A
1
A
1
A
1
A
1
Selection Guide
7C1399–12
12
60
500
50
7C1399–15
15
55
500
50
7C1399–20
20
50
500
50
7C1399–25
25
45
500
50
7C1399–35
35
40
500
50
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum CMOS Standby Current (
μ
A)
Maximum CMOS Standby Current (
μ
A)
L
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| CY7C1399L-35ZC | 32K x 8 3.3V Static RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1399B-10VC | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 3.3V 256K-Bit 32K x 8 10ns 28-Pin SOJ |
| CY7C1399B-10ZC | 制造商:Rochester Electronics LLC 功能描述:256K (32K X 8)- FAST ASYNCH SRAM - Bulk |
| CY7C1399B-10ZCT | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| CY7C1399B-12VC | 功能描述:IC SRAM 256KBIT 12NS 28SOJ RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
| CY7C1399B-12VCT | 制造商:Rochester Electronics LLC 功能描述:256K (32K X 8)- FAST ASYNCH SRAM - Tape and Reel 制造商:Cypress Semiconductor 功能描述: |
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