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參數資料
| 型號： | CY7C1399BN-15ZI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 256K (32K x 8) Static RAM |
| 中文描述： | 32K X 8 STANDARD SRAM, 15 ns, PDSO28 |
| 封裝： | 8 X 13.40 MM, TSOP1-28 |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 304K |
| 代理商： | CY7C1399BN-15ZI |
256K (32K x 8) Static RAM
CY7C1399BN
Cypress Semiconductor Corporation
Document #: 001-06490 Rev. *A
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised August 31, 2006
Features
Temperature Ranges
— Industrial: –40°C to 85°C
— Automotive-A: –40°C to 85°C
Single 3.3V power supply
Ideal for low-voltage cache memory applications
High speed: 12 ns
Low active power
— 180 mW (max.)
Low-power alpha immune 6T cell
Available in Pb-free and non Pb-free Plastic SOJ and
TSOP I packages
Functional Description
[1]
The CY7C1399BN is a high-performance 3.3V CMOS Static
RAM organized as 32,768 words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE) and
active LOW Output Enable (OE) and tri-state drivers. The
device has an automatic power-down feature, reducing the
power consumption by more than 95% when deselected.
An active LOW Write Enable signal (WE) controls the
writing/reading operation of the memory. When CE and WE
inputs are both LOW, data on the eight data input/output pins
(I/O
0
through I/O
7
) is written into the memory location
addressed by the address present on the address pins (A
0
through A
14
). Reading the device is accomplished by selecting
the device and enabling the outputs, CE and OE active LOW,
while WE remains inactive or HIGH. Under these conditions,
the contents of the location addressed by the information on
address pins is present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and Write Enable
(WE) is HIGH. The CY7C1399BN is available in 28-pin
standard 300-mil-wide SOJ and TSOP Type I packages.
Note:
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.
Selection Guide
-12
12
55
500
50
500
-15
15
50
500
50
500
500
-20
20
45
500
50
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum CMOS Standby Current (
μ
A)
Commercial
Commercial (L)
Industrial
Automotive-A
Logic Block Diagram
Pin Configurations
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
20
19
18
17
21
24
23
22
Top View
SOJ
25
28
27
26
GND
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
A
14
I/O
0
I/O
1
I/O
2
WE
A
4
A
3
A
2
A
1
OE
A
0
V
CC
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
A
5
CE
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
COLUMN
DECODER
R
S
INPUT BUFFER
POWER
DOWN
WE
OE
I/O
0
CE
I/O
1
I/O
2
I/O
3
32K x 8
ARRAY
I/O
7
I/O
6
I/O
5
I/O
4
A
0
A
1
A
1
A
1
A
1
A
1
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相關代理商/技術參數 |
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| CY7C1399BN-15ZXC | 功能描述:IC SRAM 256KBIT 15NS 28TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C1399BN-15ZXCT | 功能描述:IC SRAM 256KBIT 15NS 28TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C1399BN-15ZXI | 功能描述:靜態隨機存取存儲器 32Kx8 靜態隨機存取存儲器 3.3V RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1399BN-15ZXIT | 功能描述:靜態隨機存取存儲器 32Kx8 靜態隨機存取存儲器 3.3V RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1399BN-20ZXC | 功能描述:IC SRAM 256KBIT 20NS 28TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
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