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參數資料
| 型號： | CY7C1482V33-200AXI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM |
| 中文描述： | 4M X 18 CACHE SRAM, 3 ns, PQFP100 |
| 封裝： | 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, MS-026, TQFP-100 |
| 文件頁數： | 1/31頁 |
| 文件大小： | 531K |
| 代理商： | CY7C1482V33-200AXI |
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72-Mbit (2M x 36/4M x 18/1M x 72)
Pipelined Sync SRAM
CY7C1480V33
CY7C1482V33
CY7C1486V33
Cypress Semiconductor Corporation
Document #: 38-05283 Rev. *G
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised July 24, 2006
Features
Supports bus operation up to 250 MHz
Available speed grades are 250, 200 and 167 MHz
Registered inputs and outputs for pipelined operation
3.3V core power supply
2.5V/3.3V I/O operation
Fast clock-to-output times
— 3.0 ns (for 250-MHz device)
Provide high-performance 3-1-1-1 access rate
User-selectable burst counter supporting Intel
Pentium
interleaved or linear burst sequences
Separate processor and controller address strobes
Synchronous self-timed writes
Asynchronous output enable
Single Cycle Chip Deselect
CY7C1480V33, CY7C1482V33 available in
JEDEC-standard lead-free 100-pin TQFP, lead-free and
non-lead-free 165-ball FBGA package. CY7C1486V33
available in lead-free and non-lead-free 209 ball FBGA
package
IEEE 1149.1 JTAG-Compatible Boundary Scan
“ZZ” Sleep Mode Option
Functional Description
[1]
The CY7C1480V33/CY7C1482V33/CY7C1486V33 SRAM
integrates 2M x 36/4M x 18/1M × 72 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(CE
1
), depth-expansion Chip Enables (CE
2
and CE
3
), Burst
Control inputs (ADSC, ADSP, and ADV), Write Enables (BW
X
,
and BWE), and Global Write (GW). Asynchronous inputs
include the Output Enable (OE) and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to two or four bytes wide as
controlled by the byte write control inputs. GW when active
LOW causes all bytes to be written.
The CY7C1480V33/CY7C1482V33/CY7C1486V33 operates
from a +3.3V core power supply while all outputs may operate
with either a +2.5 or +3.3V supply. All inputs and outputs are
JEDEC-standard JESD8-5-compatible.
Selection Guide
250 MHz
3.0
500
120
200 MHz
3.0
500
120
167 MHz
3.4
450
120
Unit
ns
mA
mA
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
Note:
1. For best-practices recommendations, please refer to the Cypress application note
System Design Guidelines
on www.cypress.com.
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相關PDF資料 |
PDF描述 |
|---|---|
| CY7C1482V33-200BZI | 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM |
| CY7C1482V33-200BZXI | 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM |
| CY7C1482V33-250AXI | 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM |
| CY7C1482V33-250BZI | 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM |
| CY7C1482V33-250BZXI | 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM |
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