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參數資料
型號: CY7C1510V18-167BZC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
中文描述: 8M X 8 QDR SRAM, 0.5 ns, PBGA165
封裝: 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
文件頁數: 1/24頁
文件大?。?/td> 361K
代理商: CY7C1510V18-167BZC
PRELIMINARY
72-Mbit QDR-II SRAM 2-Word Burst Architecture
CY7C1510V18
CY7C1525V18
CY7C1512V18
CY7C1514V18
Cypress Semiconductor Corporation
Document #: 38-05489 Rev. *A
3901 North First Street
San Jose
,
CA 95134
408-943-2600
Revised July 21, 2004
Features
Separate Independent Read and Write Data Ports
— Supports concurrent transactions
200-MHz clock for high bandwidth
2-Word Burst on all accesses
Double Data Rate (DDR) interfaces on both Read and
Write ports (data transferred at 400 MHz) @ 200 MHz
Two input clocks (K and K) for precise DDR timing
— SRAM uses rising edges only
Two output clocks (C and C) accounts for clock skew
and flight time mismatching
Echo clocks (CQ and CQ) simplify data capture in high
speed systems
Single multiplexed address input bus latches address
inputs for both Read and Write ports
Separate Port Selects for depth expansion
Synchronous internally self-timed writes
Available in x8, x9, x18, and x36 configurations
Full data coherency, providing most current data
Core V
DD
= 1.8V(±0.1V);I/O V
DDQ
= 1.4V to V
DD
15 × 17 × 1.4 mm 1.0-mm pitch FBGA package, 165-ball
(11 × 15 matrix)
Variable drive HSTL output buffers
JTAG 1149.1 compatible test access port
Delay Lock Loop (DLL) for accurate data placement
Configurations
CY7C1510V18 – 8M x 8
CY7C1525V18 – 8M x 9
CY7C1512V18 – 4M x 18
CY7C1514V18 – 2M x 36
Functional Description
The CY7C1510V18, CY7C1525V18, CY7C1512V18, and
CY7C1514V18 are 1.8V Synchronous Pipelined SRAMs,
equipped with QDR-II architecture. QDR-II architecture
consists of two separate ports to access the memory array.
The Read port has dedicated Data Outputs to support Read
operations and the Write Port has dedicated Data Inputs to
support Write operations. QDR-II architecture has separate
data inputs and data outputs to completely eliminate the need
to “turn-around” the data bus required with common I/O
devices. Access to each port is accomplished through a
common address bus. The Read address is latched on the
rising edge of the K clock and the Write address is latched on
the rising edge of the K clock. Accesses to the QDR-II Read
and Write ports are completely independent of one another. In
order to maximize data throughput, both Read and Write ports
are equipped with Double Data Rate (DDR) interfaces. Each
address location is associated with two 8-bit words
(CY7C1510V18) or 9-bit words (CY7C1525V18) or 18-bit
words (CY7C1512V18) or 36-bit words (CY7C1514V18) that
burst sequentially into or out of the device. Since data can be
transferred into and out of the device on every rising edge of
both input clocks (K and K and C and C), memory bandwidth
is maximized while simplifying system design by eliminating
bus “turn-arounds.”
Depth expansion is accomplished with Port Selects for each
port. Port selects allow each port to operate independently.
All synchronous inputs pass through input registers controlled
by the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
相關PDF資料
PDF描述
CY7C1510V18-200BZC 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1510V18-250BZC 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1512V18 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1512V18-167BZC 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1512V18-200BZC 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
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