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參數資料
| 型號： | CY7C185-20SC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 8K x 8 Static RAM |
| 中文描述： | 8K X 8 STANDARD SRAM, 20 ns, PDSO28 |
| 封裝： | 0.300 INCH, PLASTIC, SOIC-28 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 197K |
| 代理商： | CY7C185-20SC |
8K x 8 Static RAM
CY7C185
Cypress Semiconductor Corporation
Document #: 38-05043 Rev. *A
3901 North First Street
San Jose
CA 95134
Revised September 13, 2002
408-943-2600
185
Features
High speed
—15 ns
Fast t
DOE
Low active power
—715 mW
Low standby power
—220 mW
CMOS for optimum speed/power
Easy memory expansion with CE
1
, CE
2
, and OE features
TTL-compatible inputs and outputs
Automatic power-down when deselected
Functional Description
[1]
The CY7C185 is a high-performance CMOS static RAM orga-
nized as 8192 words by 8 bits. Easy memory expansion is
provided by an active LOW chip enable (CE
1
), an active HIGH
chip enable (CE
2
), and active LOW output enable (OE) and
three-state drivers. This device has an automatic power-down
feature (CE
1
or CE
2
), reducing the power consumption by 70%
when deselected. The CY7C185 is in a standard 300-mil-wide
DIP, SOJ, or SOIC package.
An active LOW write enable signal (WE) controls the writ-
ing/reading operation of the memory. When CE
1
and WE in-
puts are both LOW and CE
2
is HIGH, data on the eight data
input/output pins (I/O
0
through I/O
7
) is written into the memory
location addressed by the address present on the address
pins (A
0
through A
12
). Reading the device is accomplished by
selecting the device and enabling the outputs, CE
1
and OE
active LOW, CE
2
active HIGH, while WE remains inactive or
HIGH. Under these conditions, the contents of the location ad-
dressed by the information on address pins are present on the
eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and write enable
(WE) is HIGH. A die coat is used to insure alpha immunity.
Logic Block Diagram
Pin Configurations
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
0
A
1
A
9
A
1
A
1
I/O
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
WE
CE
2
A
3
A
2
A
1
OE
A
0
CE
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
NC
A
4
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
I/O
0
I/O
1
I/O
2
GND
256 x 32 x 8
ARRAY
INPUT BUFFER
COLUMN DECODER
R
S
POWER
DOWN
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
CE
1
CE
2
WE
OE
Top View
DIP/SOJ/SOIC
Selection Guide
[2]
7C185-15
15
130
40/15
7C185-20
20
110
20/15
7C185-25
25
100
20/15
7C185-35
35
100
20/15
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum Standby Current (mA)
Note:
1.
For guidelines on SRAM system design, please refer to the
‘
System Design Guidelines
’
Cypress application note, available on the internet at www.cypress.com.
2.
For military specifications, see the CY7C185A data sheet.
相關PDF資料 |
PDF描述 |
|---|---|
| CY7C185-20VI | 8K x 8 Static RAM |
| CY7C185-25SC | 8K x 8 Static RAM |
| CY7C185-25VI | 8K x 8 Static RAM |
| CY7C185-35SC | 8K x 8 Static RAM |
| CY7C185-35VI | 8K x 8 Static RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| CY7C185-20VC | 功能描述:IC SRAM 64KBIT 20NS 28SOJ RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP 包裝:托盤 |
| CY7C185-20VCT | 制造商:Cypress Semiconductor 功能描述: |
| CY7C185-20VI | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| CY7C18525PC | 制造商:CYPRESS 功能描述:* |
| CY7C185-25PC | 功能描述:IC SRAM 64KBIT 25NS 28DIP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP 包裝:托盤 |
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