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參數資料
型號: CY7C185-35ZC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 8K x 8 Static RAM
中文描述: 8K X 8 STANDARD SRAM, 35 ns, PDSO28
封裝: TSOP-28
文件頁數: 1/11頁
文件大小: 197K
代理商: CY7C185-35ZC
8K x 8 Static RAM
CY7C185
Cypress Semiconductor Corporation
Document #: 38-05043 Rev. *A
3901 North First Street
San Jose
CA 95134
Revised September 13, 2002
408-943-2600
185
Features
High speed
—15 ns
Fast t
DOE
Low active power
—715 mW
Low standby power
—220 mW
CMOS for optimum speed/power
Easy memory expansion with CE
1
, CE
2
, and OE features
TTL-compatible inputs and outputs
Automatic power-down when deselected
Functional Description
[1]
The CY7C185 is a high-performance CMOS static RAM orga-
nized as 8192 words by 8 bits. Easy memory expansion is
provided by an active LOW chip enable (CE
1
), an active HIGH
chip enable (CE
2
), and active LOW output enable (OE) and
three-state drivers. This device has an automatic power-down
feature (CE
1
or CE
2
), reducing the power consumption by 70%
when deselected. The CY7C185 is in a standard 300-mil-wide
DIP, SOJ, or SOIC package.
An active LOW write enable signal (WE) controls the writ-
ing/reading operation of the memory. When CE
1
and WE in-
puts are both LOW and CE
2
is HIGH, data on the eight data
input/output pins (I/O
0
through I/O
7
) is written into the memory
location addressed by the address present on the address
pins (A
0
through A
12
). Reading the device is accomplished by
selecting the device and enabling the outputs, CE
1
and OE
active LOW, CE
2
active HIGH, while WE remains inactive or
HIGH. Under these conditions, the contents of the location ad-
dressed by the information on address pins are present on the
eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and write enable
(WE) is HIGH. A die coat is used to insure alpha immunity.
Logic Block Diagram
Pin Configurations
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
0
A
1
A
9
A
1
A
1
I/O
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
WE
CE
2
A
3
A
2
A
1
OE
A
0
CE
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
NC
A
4
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
I/O
0
I/O
1
I/O
2
GND
256 x 32 x 8
ARRAY
INPUT BUFFER
COLUMN DECODER
R
S
POWER
DOWN
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
CE
1
CE
2
WE
OE
Top View
DIP/SOJ/SOIC
Selection Guide
[2]
7C185-15
15
130
40/15
7C185-20
20
110
20/15
7C185-25
25
100
20/15
7C185-35
35
100
20/15
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum Standby Current (mA)
Note:
1.
For guidelines on SRAM system design, please refer to the
System Design Guidelines
Cypress application note, available on the internet at www.cypress.com.
2.
For military specifications, see the CY7C185A data sheet.
相關PDF資料
PDF描述
CY7C185-15PC 8K x 8 Static RAM
CY7C185-15VC 8K x 8 Static RAM
CY7C185-15ZC 8K x 8 Static RAM
CY7C186 8Kx8 Static RAM
CY7C186-20 8Kx8 Static RAM
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