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參數資料
| 型號： | CY7C266-25JC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 8Kx8 Power-Switched and Reprogrammable PROM |
| 中文描述： | 8K X 8 OTPROM, 25 ns, PQCC28 |
| 封裝： | PLASTIC, LCC-28 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 261K |
| 代理商： | CY7C266-25JC |
8Kx8 Power-Switched and
Reprogrammable PROM
CY7C266
Cypress Semiconductor Corporation
Document #: 38-04005 Rev. *B
3901 North First Street
San Jose
CA 95134
Revised December 27, 2002
408-943-2600
1CY7C266
Features
CMOS for optimum speed/power
Windowed for reprogrammability
High speed
—20 ns (Commercial)
Low power
—660 mW (Commercial)
Super low standby power
—Less than 85 mW when deselected
EPROM technology 100% programmable
5V
±
10% V
CC
, commercial and military
TTL-compatible I/O
Direct replacement for 27C64 EPROMs
Functional Description
The CY7C266 is a high-performance 8192-word by 8-bit
CMOS PROM. When deselected, the CY7C266 automatically
powers down into a low-power standby mode. It is packaged
in a 600-mil-wide package. The reprogrammable packages
are equipped with an erasure window; when exposed to UV
light, these PROMs are erased and can then be repro-
grammed. The memory cells utilize proven EPROM
floating-gate
technology
programming algorithms.
The CY7C266 is a plug-in replacement for EPROM devices.
The EPROM cell requires only 12.5V for the super voltage and
low-current requirements allow for gang programming. The
EPROM cells allow for each memory location to be tested
100%, as each location is written into, erased, and repeatedly
exercised prior to encapsulation. Each PROM is also tested
for AC performance to guarantee that after customer
programming, the product will meet DC and AC specification
limits.
Reading is accomplished by placing an active LOW signal on
OE and CE. The contents of the memory location addressed
by the address lines (A
0
through A
12
) will become available on
the output lines (O
0
through O
7
).
and
byte-wide
intelligent
LogicBlockDiagram
Pin Configurations
1
2
3
4
5
6
7
8
9
10
11
12
13
14
16
15
17
18
19
20
24
23
22
21
25
28
27
26
Top View
CerDIP
V
CC
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
O
0
O
1
O
2
GND
V
CC
V
CC
NC
A
8
A
9
A
11
OE
A
10
CE
O
7
O
6
O
5
O
4
O
3
A
0
A
1
A
7
A
2
A
3
A
4
A
5
A
6
A
8
A
9
A
10
A
11
A
12
POWER DOWN
O
7
O
6
O
5
O
4
O
3
O
2
O
1
O
0
CE
OE
PROGRAMMABLE
ARRAY
MULTIPLEXER
COLUMN
ADDRESS
12
13
O
0
31
4
5
6
7
8
9
10
11
3 2 1
30
14151617
26
25
24
23
22
21
A
VC
A
6
A
5
A
4
A
3
A
2
A
1
A
0
NC
CE
O
7
O
6
A
9
A
11
NC
OE
A
10
O
G
Top View
A
LCC
A
8
V
O
O
O
181920
27
28
29
32
N
N
N
O
VC
7C266
7C266
ADDRESS
ROW
ADDRESS
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相關代理商/技術參數 |
參數描述 |
|---|---|
| CY7C266-25PC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C266-25WC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C2663KV18-450BZI | 功能描述:靜態隨機存取存儲器 CY7C2663KV18-450BZI RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C2663KV18-450BZXC | 功能描述:靜態隨機存取存儲器 CY7C2663KV18-450BZXC RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C2663KV18-500BZC | 制造商:Cypress Semiconductor 功能描述:144-MBIT QDR? II+ SRAM 4-WORD BURST 8M X 18 165-BALL FBGA - Bulk |
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