
64K x 24 Static RAM Module
CYM1730
Cypress Semiconductor Corporation
3901 North First Street
San Jose
CA 95134
July 1991 – Revised January 1995
408-943-2600
1CYM1730
Features
High-density 1.5M SRAM module
High-speed CMOS SRAMs
—Access time of 25 ns
56-pin, 0.5-inch-high ZIP package
Low active power
—2.8W (max. for t
AA
= 25 ns)
SMD technology
TTL-compatible inputs and outputs
Commercial temperature range
Small PCB footprint
—1.05 sq. in.
Functional Description
The CYM1730 is a high-performance 1.5M static RAM module
organized as 64K words by 24 bits. This module is constructed
using six 32K x 8 static RAMs in SOJ packages mounted onto
an epoxy laminate board with pins.
Writing to the device is accomplished when the chip select
(CS) and write enable (WE) inputs are both LOW. Data on the
input/output pins (I/O
0
through I/O
23
) of the device is written
into the memory location specified on the address pins (A
0
through A
15
).
Reading the device is accomplished by taking the chip select
(CS) and output enable (OE) LOW while write enable (WE)
remains HIGH. Under these conditions, the contents of the
memory location specified on the address pins will appear on
the input/output pins.
The input/output pins remain in a high-impedance state unless
the module is selected, outputs are enabled, and write enable
is HIGH.
Logic Block Diagram
A
0
– A
14
OE
WE
Pin Configuration
ZIP
1730-1
Top View
1730-2
32K x 8
SRAM
8
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
52
54
56
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
51
53
55
15
1 OF 2
DECODER
A
15
CS
32K x 8
SRAM
32K x 8
SRAM
8
32K x 8
SRAM
32K x 8
SRAM
8
32K x 8
SRAM
I/O
0
– I/O
7
I/O
8
– I/O
15
I/O
16
– I/O
23
V
CC
I/O
1
I/O
3
I/O
5
I/O
7
GND
A
1
A
3
A
5
A
7
NC
GND
I/O
9
I/O
11
I/O
13
I/O
15
NC
OE
A
9
A
11
A
13
A
15
GND
I/O
17
I/O
19
I/O
21
I/O
23
V
CC
V
CC
I/O
0
I/O
2
I/O
4
I/O
6
GND
A
0
A
2
A
4
A
6
CS
NC
I/O
8
I/O
10
I/O
12
I/O
14
GND
WE
A
8
A
10
A
12
A
14
GND
I/O
16
I/O
18
I/O
20
I/O
22
V
CC