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參數(shù)資料
| 型號(hào)： | CYM8301BV33 |
| 英文描述： | Memory |
| 中文描述： | 內(nèi)存 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 335K |
| 代理商： | CYM8301BV33 |
512K x 24 Static RAM Module
CYM8301BV33
Cypress Semiconductor Corporation
Document #: 38-05294 Rev. **
3901 North First Street
San Jose
CA 95134
408-943-2600
Revised May 13, 2002
Features
High-density 12-Megabit SRAM module
Access time: 10 ns
Single 3.3V power supply
Low active power(1000 W max.)
TTL-compatible inputs and outputs
Available in standard 119-ball BGA
Interface to Motorola digital signal processor (DSP) and
analog devices
Functional Description
The CYM8301BV33 is a 3.3V high-performance 12-Megabit
static RAM organized as a 512K words by 24 bits. This module
is constructed from three 512K
×
8 SRAM dice mounted on a
multi layer laminate substrate combined to form a 24 bit
SRAM. CYM8301BV33 is a ideal single-chip solution for
Motorola
’
s DSP5630X or a two chip solution to Analog
Devices ADSP2106XL.
Each data byte is separately controlled by the individual chip
selects(CE0,CE1,CE2). CE0 controls I/O0
–
7. CE1 controls
I/O7
–
15. CE2 controls I/O16
–
23.
Writing the data bytes into the SRAM is accomplished when
the chip select (CSx) controlling that byte is LOW and Write
Enable (WE) is LOW.Data on the respective input/output pins
(I/O) is then written into the memory location specified on the
address pins (A0 through A18). Asserting all the (CSx) LOW
and (WE) LOW will write the entire data (I/O0
–
23) into the
memory. Output Enable (OE) is a don
’
t care in a write mode.
Reading a byte is accomplished when the chip select (CSx)
controlling that byte is LOW and Write Enable (WE) is LOW
while the Output Enable (OE) is LOW.Under these conditions
the contents of the memory location specified on the address
pins will all appear on the specified data input/output pins (I/O).
Asserting all the (CSx) LOW and (WE) LOW with Output
Enable (OE) LOW will read the entire data (I/O0-23) from the
memory.
The data input/output pins (I/O0
–
23) are placed in a
high-impedance state when the device is deselected (CE)
HIGH, the outputs are disabled (OE) HIGH or during a Write
operation (CE LOW, and WE LOW).
For further details on Read and Write conditions, please see
the truth table on page 7 of this data sheet.
Selection Guide
CYM8301BV33-10 CYM8301BV33-12 CYM8301BV33-15 Unit
10
12
300
270
330
300
30
30
Maximum Access Time
Maximum Operating Current Commercial
15
255
285
30
ns
mA
Industrial
Commercial/Industrial
Maximum Standby Current
mA
Functional Block Diagram
A[18:0]
WE
OE
CE0
CE1
CE2
I/O0
–
23
I/O0
–
7
I/O8
–
15
I/O16
–
23
I/O0
–
7
I/O0
–
7
I/O0
–
7
CE
WE
OE
A[18:0]
A[18:0]
A[18:0]
CE
WE
CE
WE
OE
OE
8
8
8
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