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參數(shù)資料
型號(hào): CZT3055
廠商: CENTRAL SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: 2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR
中文描述: 6 A, 60 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC PACKAGE-4
文件頁數(shù): 1/2頁
文件大小: 74K
代理商: CZT3055
MAXIMUM RATINGS:
(TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
VCER
VCEO
VEBO
IC
IB
PD
100
V
Collector-Emitter Voltage
70
V
Collector-Emitter Voltage
60
V
Emitter-Base Voltage
7.0
V
Collector Current
6.0
A
Base Current
3.0
A
Power Dissipation
2.0
W
Operating and Storage
Junction Temperature
TJ,Tstg
Θ
JA
-65 to +150
°C
Thermal Resistance
62.5
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICEO
ICEV
IEBO
BVCER
BVCEO
* VCE(SAT)
* VBE(ON)
* hFE
* hFE
fT
VCE=30V
VCE=100V, VEB=1.5V
VEB=7.0V
IC=30mA, RBE=100
IC=30mA
IC=4.0A, IB=400mA
VCE=4.0V, IC=4.0A
VCE=4.0V, IC=4.0A
VCE=4.0V, IC=6.0A
VCE=10V, IC=500mA, f=1.0MHz
700
μA
1.0
mA
5.0
mA
70
V
60
V
1.1
V
1.5
V
20
70
5.0
2.5
MHz
* Pulsed, 2% D.C.
CZT2955 PNP
CZT3055 NPN
2.0W SURFACE MOUNT
COMPLEMENTARY SILICON
POWER TRANSISTOR
SOT-223 CASE
Central
Semiconductor Corp.
TM
R3 (17-June 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT2955
and CZT3055 types are surface mount epoxy
molded complementary silicon transistors
manufactured by the epitaxial base process,
designed for surface mounted power amplifier
applications up to 6.0 amps.
MARKING CODE: FULL PART NUMBER
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參數(shù)描述
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