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參數(shù)資料
型號(hào): CZT900K
英文描述: TRANSISTOR | BJT | DARLINGTON | NPN | 25V V(BR)CEO | 1A I(C) | SOT-223
中文描述: 晶體管|晶體管|達(dá)林頓|叩| 25V的五(巴西)總裁| 1A條一(c)|的SOT - 223
文件頁數(shù): 1/2頁
文件大?。?/td> 248K
代理商: CZT900K
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT900K
type is an NPN silicon Darlington transistor man-
ufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed
for applications requiring extremely high gain.
MAXIMUM RATINGS:
(TA=25°C)
SYMBOL
VCBO
VCEO
VEBO
IC
PD
UNITS
V
V
V
A
W
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
50
25
10
1.0
2.0
TJ,Tstg
Θ
JA
-65 to +150
62.5
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
ICBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(ON)
hFE
hFE
fT
TEST CONDITIONS
VCB=30V
IC=10μA
IC=10mA
IE=100μA
IC=100mA, IB=0.1mA
VCE=5.0V, IC=100mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=100mA
VCE=5.0V, IC=10mA, f=100MHz
MIN
MAX
100
UNITS
nA
V
V
V
V
V
50
25
10
1.5
2.0
900,000
900,000
125
MHz
CZT900K
SURFACE MOUNT
NPN SILICON
DARLINGTON TRANSISTOR
SOT-223 CASE
Central
Semiconductor Corp.
TM
R1 (01-Feb 2001)
相關(guān)PDF資料
PDF描述
C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
G1-37 GENERAL-PURPOSE PHOTOVOLTAIC CELL
G1-5 GENERAL-PURPOSE PHOTOVOLTAIC CELL
G1-8 GENERAL-PURPOSE PHOTOVOLTAIC CELL
G21-1-37 GENERAL-PURPOSE PHOTOVOLTAIC CELL
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