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參數資料
| 型號： | D1002UK |
| 英文描述： | Gold Metallised Multi-Purpose Silicon DMOS RF FET(40W-28V-175MHz,Single Ended)(鍍金多用DMOS射頻硅場效應管(40W-28V-175MHz,單端)) |
| 中文描述： | 金鍍金屬多功能硅的DMOS射頻場效應管（功率40W - 28V的- 175MHz時，單端）（鍍金多用的DMOS射頻硅場效應管（功率40W - 28V的- 175MHz時，單端）） |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 41K |
| 代理商： | D1002UK |
D1002UK
3/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukP
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
87W
70V
±20V
10A
–65 to 150°C
200°C
MECHANICAL DATA
1
2
3
4
A
M
F
E
D
C
B
H
J
I
G
K
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
40W – 28V – 175MHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 16 dB MINIMUM
DA
PIN 1
SOURCE
PIN 3
SOURCE
PIN 2
DRAIN
PIN 4
GATE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 175 MHz
METAL GATE RF SILICON FET
TetraFET
DIM
A
B
C
D
E
F
G
H
I
J
K
M
mm
24.76
18.42
45°
6.35
3.17
5.71
9.52
6.60
0.13
4.32
2.54
20.32
Tol.
0.13
0.13
5°
0.13
0.13
0.13
0.13
REF
0.02
0.13
0.13
0.25
Inches
0.975
0.725
45°
0.25
0.125 DIA
0.225
0.375
0.260
0.005
0.170
0.100
0.800
Tol.
0.005
0.005
5°
0.005
0.005
0.005
0.005
REF
0.001
0.005
0.005
0.010
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PDF描述 |
|---|---|
| D1002UK | METAL GATE RF SILICON FET |
| D1003UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(60W-28V-175MHz,Single Ended)(鍍金多用DMOS射頻硅場效應管(60W-28V-175MHz,單端)) |
| D1003UK | METAL GATE RF SILICON FET |
| D10040200GT | Product Specification |
| D1004UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(80W-28V-175MHz,Single Ended)(鍍金多用DMOS射頻硅場效應管(80W-28V-175MHz,單端)) |
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參數描述 |
|---|---|
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| D-100-31CS379 | 制造商:TE Connectivity 功能描述: |
| D10032 | 制造商:HONEYWELL CLAROSTAT 功能描述:Speed & Position,Industrial Potentiometers,Industrial Potentiometers Shared |
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