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參數資料
| 型號： | D1006UK |
| 英文描述： | Gold Metallised Multi-Purpose Silicon DMOS RF FET(120W-28V-175MHz,Single Ended)(鍍金多用DMOS射頻硅場效應管(120W-28V-175MHz,單端)) |
| 中文描述： | 金鍍金屬多功能硅的DMOS射頻場效應管（120瓦- 28V的- 175MHz時，單端）（鍍金多用的DMOS射頻硅場效應管（120瓦- 28V的- 175MHz時，單端）） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 59K |
| 代理商： | D1006UK |
D1006UK
Prelim. 11/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukP
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
220W
70V
±20V
30A
–65 to 150°C
200°C
MECHANICAL DATA
A
B
C
E
F
G
H
J
D
1
5
6
4
3
2
Q
P
O
N
K
M
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
120W – 28V – 175MHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 14 dB MINIMUM
DV
PIN 1
SOURCE
PIN 3
SOURCE
PIN 5
GATE
PIN 2
DRAIN
PIN 4
SOURCE
PIN 6
SOURCE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25
°
C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 200 MHz
METAL GATE RF SILICON FET
TetraFET
DIM
A
B
C
D
E
F
G
H
J
K
M
N
O
P
Q
mm
9.09
19.3
45
°
5.71
1.65R
9.78
20.32
19.30
1.52R
10.77
22.86
3.17
0.13
4.19
6.35
Tol.
0.13
0.13
5
°
0.13
0.13
0.13
0.25
0.13
0.13
0.13
0.13
0.13
0.02
0.13
REF
Inches
0.358
0.760
45
°
0.225
0.065R
0.385
0.800
0.760
0.060R
0.424
0.900
0.125
0.005
0.165
0.250
Tol.
0.005
0.005
5
°
0.005
0.005
0.005
0.010
0.005
0.005
0.005
0.005
0.005
0.001
0.005
REF
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| D1008UK | METAL GATE RF SILICON FET |
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參數描述 |
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