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參數資料
| 型號： | D1015UK |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | METAL GATE RF SILICON FET |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CERAMIC, DH, 5 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 60K |
| 代理商： | D1015UK |
D1015UK
Prelim. 11/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
350W
70V
±20V
20A
–65 to 150°C
200°C
MECHANICAL DATA
A
M
K
J
I
H
G
(typ)
F
E
D
C
B
(4 pls)
N
1
5
4
3
2
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
125W – 28V – 400MHz
PUSH–PULL
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 13 dB MINIMUM
DH
PIN 1
SOURCE (COMMON)
PIN 2
DRAIN 1
PIN 3
DRAIN 2
PIN 4
GATE 2
PIN 5
GATE 1
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25
°
C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 400 MHz
METAL GATE RF SILICON FET
TetraFET
* Per Side
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
mm
13.97
5.72
45
°
9.78
1.65R
23.75
1.52R
30.48
19.17
0.13
2.54
1.52
5.08
Tol.
0.26
0.13
5
°
0.13
0.13
0.13
0.13
0.13
0.26
0.02
0.13
0.13
0.50
Inches
0.550
0.225
45
°
0.385
0.065R
0.935
0.060R
1.200
0.755
0.005
0.100
0.060
0.200
Tol.
0.010
0.005
5
°
0.005
0.005
0.005
0.005
0.005
0.010
0.001
0.005
0.005
0.020
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| D1016UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(40W-28V-500MHz,Push-Pull)(鍍金多用DMOS射頻硅場效應管(40W-28V-500MHz,推挽式)) |
| D1016UK | METAL GATE RF SILICON FET |
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| D1017UK | METAL GATE RF SILICON FET |
| D1018UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-28V-500MHz,Push-Pull)(鍍金多用DMOS射頻硅場效應管(100W-28V-500MHz,推挽式)) |
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