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參數資料
| 型號： | D1082UK |
| 英文描述： | Gold Metallised Multi-Purpose Silicon DMOS RF FET(4W-28V-200MHz,Single Ended)(鍍金多用DMOS射頻硅場效應管(4W-28V-200MHz,單端式)) |
| 中文描述： | 金鍍金屬多功能硅的DMOS射頻場效應管（4瓦- 28V的- 200MHz的，單端）（鍍金多用的DMOS射頻硅場效應管（4瓦- 28V的- 200MHz的，單端式）） |
| 文件頁數： | 1/2頁 |
| 文件大小： | 20K |
| 代理商： | D1082UK |
LAB
SEME
Semelab plc.
Telephone (01455) 556565. Fax (01455) 552612. Email rf@semelab.co.uk
Prelim. 7/96
D1082UK
P
D
BV
DSS
BV
GSS
I
D(sat)
T
STG
T
J
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
62.5W
70V
±20V
5A
–65 to 125°C
150°C
MECHANICAL DATA
Dimensions in mm (inches)
6
(
7
± 1
2.29
(0.090)
0.51
(0.020)
REF.
1
(
7
± 1
7
± 1
2
1
3
0
(
(
4
6.35
(0.250)
5.33
(0.210)
0.89
(0.035)
2 pls.
0.64
(0.025)
1.02
(0.040)
0.51
(0.020)
REF.
1
(
2.29
(0.090)
4.57
(0.180)
0.76
(0.030)
REF.
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
4W – 28V – 200MHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND
APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 13dB MINIMUM
SURFACE MOUNT
TO–251 PACKAGE
PIN 1 – GATE
PIN 3 – SOURCE
PIN 2 – DRAIN
PIN 4 – DRAIN
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise stated)
APPLICATIONS
LOW COST DC to 200 MHz
METAL GATE RF SILICON FET
TetraFET
4
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