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參數(shù)資料
| 型號(hào)： | D1209 |
| 廠商： | TT electronics Semelab Limited |
| 英文描述： | METAL GATE RF SILICON FET |
| 中文描述： | 金屬門射頻硅場效應(yīng)管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 16K |
| 代理商： | D1209 |
D1209UK
6/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
* Per Side
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
100W
40V
±20V
10A
–65 to 150°C
200°C
MECHANICAL DATA
F
A
C
B
(
2 pls
)
K
2
3
E
1
G
(
4 pls
)
5
4
D
N
M
J
I
H
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W – 12.5V – 400MHz
PUSH–PULL
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
VERY LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 10 dB MINIMUM
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
METAL GATE RF SILICON FET
TetraFET
DK
PIN 1
PIN 3
PIN 5
SOURCE (COMMON)
DRAIN 2
GATE 1
PIN 2
PIN 4
DRAIN 1
GATE 2
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
mm
6.45
1.65R
45°
16.51
6.47
18.41
1.52
4.82
24.76
1.52
0.81R
0.13
2.16
Tol.
0.13
0.13
5°
0.76
0.13
0.13
0.13
0.25
0.13
0.13
0.13
0.02
0.13
Inches
0.254
0.065R
45°
0.650
0.255
0.725
0.060
0.190
0.975
0.060
0.032R
0.005
0.085
Tol.
0.005
0.005
5°
0.03
0.005
0.005
0.005
0.010
0.005
0.005
0.005
0.001
0.005
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