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參數(shù)資料
| 型號(hào)： | D1210 |
| 廠商： | TT electronics Semelab Limited |
| 英文描述： | METAL GATE RF SILICON FET |
| 中文描述： | 金屬門(mén)射頻硅場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 16K |
| 代理商： | D1210 |
D1210UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/95
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
50W
40V
±20V
8A
–65 to 150°C
200°C
MECHANICAL DATA
1
2
3
4
A
M
F
E
D
C
B
H
J
I
G
K
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 12.5V – 175MHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 10 dB MINIMUM
DA
PIN 1
SOURCE
PIN 3
SOURCE
PIN 2
DRAIN
PIN 4
GATE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 175 MHz
METAL GATE RF SILICON FET
TetraFET
DIM
A
B
C
D
E
F
G
H
I
J
K
M
mm
24.76
18.42
45°
6.35
3.17
5.71
9.52
6.60
0.13
4.32
2.54
20.32
Tol.
0.13
0.13
5°
0.13
0.13
0.13
0.13
REF
0.02
0.13
0.13
0.25
Inches
0.975
0.725
45°
0.25
0.125 DIA
0.225
0.375
0.260
0.005
0.170
0.100
0.800
Tol.
0.005
0.005
5°
0.005
0.005
0.005
0.005
REF
0.001
0.005
0.005
0.010
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| D1210UK | METAL GATE RF SILICON FET |
| D1211UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-500MHz,Single Ended)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(10W-12.5V-500MHz,單端式)) |
| D1211 | METAL GATE RF SILICON FET |
| D1211UK | METAL GATE RF SILICON FET |
| D1212UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-12.5V-500MHz,Push-Pull)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(100W-12.5V-500MHz,推挽式)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| D1210_13 | 制造商:CRYDOM 制造商全稱:Crydom Inc., 功能描述:panel mount |
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