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參數(shù)資料
| 型號(hào)： | D2008 |
| 廠商： | TT electronics Semelab Limited |
| 英文描述： | METAL GATE RF SILICON FET |
| 中文描述： | 金屬門射頻硅場效應(yīng)管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 18K |
| 代理商： | D2008 |
D2008UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/97
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
29W
65V
±20V
2A
–65 to 150°C
200°C
MECHANICAL DATA
(0.89
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
typ.
45
12.70
(0.500)
min.
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
7.75 (0.305)
8.51 (0.335)
dia.
1
2
3
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 28V – 400MHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND
APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 13 dB MINIMUM
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
VHF COMMUNICATIONS
from DC to 400MHz
METAL GATE RF SILICON FET
TetraFET
TO-39 PACKAGE
PIN2 – GATE
PIN1 – DRAIN
PIN3 – SOURCE
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| D2010 | METAL GATE RF SILICON FET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| D2008 | 制造商:Dagnall Electronics 功能描述:TRANSFORMER 1.5VA 2X 12V |
| D-200-82 | 功能描述:端子 CLAMP RING 27.94x2.16mm RD RoHS:否 制造商:AVX 產(chǎn)品:Junction Box - Wire to Wire 系列:9826 線規(guī):26-18 接線柱/接頭大小: 絕緣: 顏色:Red 型式:Female 觸點(diǎn)電鍍:Tin over Nickel 觸點(diǎn)材料:Beryllium Copper, Phosphor Bronze 端接類型:Crimp |
| D-200-82 | 制造商:TE Connectivity 功能描述:TERMINAL BUTT SPLICE 26-20AWG CRIMP |
| D-200-82CS2901 | 制造商:TE Connectivity 功能描述:D17660N001 |
| D-200-82-ND | 制造商:PANDUIT 制造商全稱:PANDUIT CORP. 功能描述:IN-LINE SPLICE SEALING SYSTEM, 1 TO 1 NICKEL PLATED CRIMP, 200deg.C |
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