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參數資料
| 型號： | D2011 |
| 廠商： | TT electronics Semelab Limited |
| 英文描述： | METAL GATE RF SILICON FET |
| 中文描述： | 金屬門射頻硅場效應管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 19K |
| 代理商： | D2011 |
D2011UK
Prelim. 9/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukP
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
70W
65V
±20V
8A
–65 to 150°C
200°C
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 28V – 1GHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
LOW NOISE
HIGH GAIN
PIN 1 Source
PIN 2 Drain
PIN 3 Drain
PIN 4 Source
PIN 5 Source
PIN 6 Gate
PIN 7 Gate
PIN 8 Source
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 2 GHz
METAL GATE RF SILICON FET
TetraFET
DBC3 Package
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
mm
6.47
0.76
45°
0.76
1.14
2.67
11.73
8.43
7.92
0.20
0.64
0.30
3.25
2.11
6.35SQ
1.65
0.13
0.25
Tol.
0.08
0.08
5°
0.08
0.08
0.08
0.13
0.08
0.08
0.02
0.02
0.02
0.08
0.08
0.08
0.51
max
0.07
Inches
.255
.030
45
°
.030
.045
.105
.462
.332
.312
.008
.025
.012
.128
.083
.250SQ
.065
.005
0.010
Tol.
.003
.003
5°
.003
.003
.003
.005
.003
.003
.001
.001
.001
.003
.003
.003
.020
max
.003
相關PDF資料 |
PDF描述 |
|---|---|
| D2011UK | METAL GATE RF SILICON FET |
| D2012UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-28V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場效應管(10W-28V-1GHz,單端式)) |
| D2012UK | METAL GATE RF SILICON FET |
| D2012 | Si NPN TRANSISTOR |
| D2013UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-28V-1GHz,Push-Pull)(鍍金多用DMOS射頻硅場效應管(20W-28V-1GHz,推拉式)) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| D2011 | 制造商:Dagnall Electronics 功能描述:TRANSFORMER 1.5VA 2X 6V |
| D2011-SB1-V-VO-C111 | 制造商:DANAHER - INDUSTRIAL/SPECIALTY 功能描述:SOLENOID VALVE, Supply Voltage Max:120VAC, Orifice Size:3/64", Operating Pressur |
| D2011-SB1-V-VO-C203 | 制造商:Gems Sensors & Controls 功能描述:SOLENOID VALVE; Supply Voltage Max:12VDC; Orifice Size:3.64"; Operating Pressure Max:900psi; Connection Size:1/4"; Operating Power Max:10W; Operating Voltage Max:12VDC; Port Style:NPT; Valve Type:2-Way Normally Closed |
| D2011UK | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:METAL GATE RF SILICON FET |
| D2012 | 制造商:Dagnall Electronics 功能描述:TRANSFORMER 1.5VA 2 X 8V |
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