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參數資料
| 型號： | D2019 |
| 廠商： | TT electronics Semelab Limited |
| 英文描述： | METAL GATE RF SILICON FET |
| 中文描述： | 金屬門射頻硅場效應管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 16K |
| 代理商： | D2019 |
D2019UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/95
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
17.5W
65V
±20V
1A
–65 to 150°C
200°C
MECHANICAL DATA
1
2
3
4
8
7
6
5
M
N
B
C
A
E
F
G
D
H
K
L
J
P
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
2.5W – 28V – 1GHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
VERY LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 13 dB MINIMUM
SO8 PACKAGE
PIN 1 – SOURCE
PIN 2 – DRAIN
PIN 3 – DRAIN
PIN 4 – SOURCE
PIN 5 – SOURCE
PIN 6 – GATE
PIN 7 – GATE
PIN 8 – SOURCE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 2 GHz
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
P
mm
4.06
5.08
1.27
0.51
3.56
4.06
1.65
Tol.
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
+0.25
-0.00
Min.
Max.
Max.
Min.
Max.
±0.08
Max.
±0.08
Inches
0.160
0.200
0.050
0.020
0.140
0.160
0.065
Tol.
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
+0.010
-0.000
Min.
Max.
Max.
Min.
Max.
±0.003
Max.
±0.003
0.76
0.030
0.51
1.02
45°
0°
7°
0.20
2.18
4.57
0.020
0.040
45°
0°
7°
0.008
0.086
0.180
METAL GATE RF SILICON FET
TetraFET
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