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參數資料
| 型號： | D2029UK |
| 英文描述： | Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-28V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場效應管(2.5W-28V-1GHz,單端式)) |
| 中文描述： | 金鍍金屬多功能硅的DMOS射頻場效應管（2.5瓦- 28V的- 1GHz的，單端）（鍍金多用的DMOS射頻硅場效應管（2.5瓦- 28V的- 1GHz的，單端式）） |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 15K |
| 代理商： | D2029UK |
D2201UK
Prelim. 12/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
17.5W
40V
±20V
2A
–65 to 150°C
200°C
MECHANICAL DATA
G
K
M
J
I
E
D
(2 pls)
C
N
(typ)
A
B
F
(2 pls)
H
1
2
3
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
2.5W – 12.5V – 1GHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 10 dB MINIMUM
DP
PIN 1
SOURCE
PIN 2
DRAIN
PIN 3
GATE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
VHF/UHF COMMUNICATIONS
from 1 MHz to 2 GHz
METAL GATE RF SILICON FET
TetraFET
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
mm
16.51
6.35
45°
3.30
18.92
1.52
2.16
14.22
1.52
6.35
0.13
5.08
1.27 x 45°
Tol.
0.25
0.13
5°
0.13
0.08
0.13
0.13
0.08
0.13
0.13
0.03
0.51
0.13
Inches
0.650
0.250
45°
0.130
0.745
0.060
0.085
0.560
0.060
0.250
0.005
0.200
0.050 x 45° 0.005
Tol.
0.010
0.005
5°
0.005
0.003
0.005
0.005
0.003
0.005
0.005
0.001
0.020
相關PDF資料 |
PDF描述 |
|---|---|
| D2029UK | METAL GATE RF SILICON FET |
| D2202UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場效應管(5W-12.5V-1GHz,單端式)) |
| D2202UK | METAL GATE RF SILICON FET |
| D2203UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Push-Pull)(鍍金多用DMOS射頻硅場效應管(5W-12.5V-1GHz,推拉式)) |
| D2203 | METAL GATE RF SILICON FET |
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