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參數資料
| 型號： | D2054UK |
| 英文描述： | Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-28V-1GHz,Push-Pull)(鍍金多用DMOS射頻硅場效應管(10W-28V-1GHz,推拉式)) |
| 中文描述： | 金鍍金屬多功能硅的DMOS射頻場效應管（10W的- 28V的- 1GHz的，推挽式）（鍍金多用的DMOS射頻硅場效應管（10W的- 28V的- 1GHz的，推拉式）） |
| 文件頁數： | 1/2頁 |
| 文件大小： | 20K |
| 代理商： | D2054UK |
D2054UK
Prelim. 9/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukP
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
* Per Side
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
29W
65V
±20V
2A
–65 to 150°C
200°C
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 28V – 1GHz
PUSH–PULL
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
VERY LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 13 dB MINIMUM
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1MHz to 1 GHz
METAL GATE RF SILICON FET
TetraFET
PIN 1 Source (Common)
PIN 2 Drain 1
PIN 3 Drain 2
PIN 4 Source (Common)
PIN 5 Source (Common)
PIN 6 Gate 2
PIN 7 Gate 1
PIN 8 Source (Common)
DBC4 Package
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
mm
6.47
0.76
45°
0.76
1.14
2.67
11.73
8.43
7.92
0.20
0.64
0.30
3.25
2.11
6.35SQ
1.65
0.13
0.25
Tol.
0.08
0.08
5°
0.08
0.08
0.08
0.13
0.08
0.08
0.02
0.02
0.02
0.08
0.08
0.08
0.51
max
0.07
Inches
.255
.030
45
°
.030
.045
.105
.462
.332
.312
.008
.025
.012
.128
.083
.250SQ
.065
.005
0.010
Tol.
.003
.003
5°
.003
.003
.003
.005
.003
.003
.001
.001
.001
.003
.003
.003
.020
max
.003
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