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參數資料
| 型號： | D2084UK |
| 英文描述： | Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-28V-900MHz)(鍍金多用DMOS射頻硅場效應管(100W-28V-900MHz)) |
| 中文描述： | 金鍍金屬多功能硅的DMOS射頻場效應管（功率100W - 28V的- 900MHz時）（鍍金多用的DMOS射頻硅場效應管（功率100W - 28V的- 900MHz的）） |
| 文件頁數： | 1/1頁 |
| 文件大小： | 13K |
| 代理商： | D2084UK |
D2084UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 5/96
Parameter
Test Conditions
PER SIDE
Min.
Typ.
Max.
Unit
BV
DSS
I
DSS
I
GSS
V
GS(th)
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Threshold Voltage
g
m
*
C
iss
C
oss
C
rss
V
GS(th)match
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Threshold Matching Voltage
Between Sides
I = 100mA
V = 28V
V = 20V
I = 10mA
V = 10V
T = 300
μ
S
V
DS
= 0V
V = 28V
V = 28V
I
D
= 10mA
V
DS
= V
GS
TOTAL DEVICE
I = 3A
V
GS
= -5V
V
mA
μ
A
V
mhos
pF
pF
pF
V
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
P
O
= 100W
Thermal Resistance = 0.6 °C / W
f = 900MHz
V = 28V
I
DQ
= 3A
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
65
4
1
7
1
3.2
170
68
3.6
0.1
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
O
P
mm
19.05
10.77
45°
9.78
5.71
27.94
1.52R
10.16
22.22
0.13
2.72
1.70
5.08
34.03
1.57R
Tol.
0.50
0.13
5°
0.13
0.13
0.13
0.13
0.13
MAX
0.02
0.13
0.13
0.50
0.13
0.08
Inches
0.75
0.424
45°
0.385
0.225
1.100
0.060R
0.400
0.875
0.005
0.107
0.067
0.200
1.340
0.062R
Tol.
0.020
0.005
5°
0.005
0.005
0.005
0.005
0.005
MAX
0.001
0.005
0.005
0.020
0.005
0.003
MECHANICAL DATA
M
K
J
I
O
N
A
C
(2 pls)
D
F
E
(4 pls)
B
G
(typ)
P
(2 pls)
1
5
4
3
2
H
TetraFET
100W – 28V – 900MHz
PIN 1
SOURCE (COMMON)
PIN 2
DRAIN 1
PIN 3
DRAIN 2
PIN 4
GATE 2
PIN 5
GATE 1
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