- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄376514 > D2218UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場效應管(20W-12.5V-1GHz,單端式)) PDF資料下載
參數(shù)資料
| 型號： | D2218UK |
| 英文描述： | Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場效應管(20W-12.5V-1GHz,單端式)) |
| 中文描述： | 金鍍金屬多功能硅的DMOS射頻場效應管（20瓦- 12.5V - 1GHz的，單端）（鍍金多用的DMOS射頻硅場效應管（20瓦- 12.5V - 1GHz的，單端式）） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 17K |
| 代理商： | D2218UK |
D2218UK
9/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
70W
40V
±20V
16A
–65 to 150°C
200°C
MECHANICAL DATA
H
E
C
A
B
D
( 2 p l s )
1
2
3
F
G
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W – 12.5V – 1GHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 10 dB MINIMUM
DP
PIN 1
SOURCE
PIN 2
DRAIN
PIN 3
GATE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
VHF/UHF COMMUNICATIONS
from DC to 1 GHz
METAL GATE RF SILICON FET
TetraFET
DIM
A
B
C
D
E
F
G
H
mm
16.51
6.35
45°
1.52
6.35
0.13
3.56
0.64
Tol.
0.25
0.13
5°
0.13
0.13
0.03
0.51
0.13
Inches
0.650
0.250
45°
0.060
0.250
0.005
0.140
0.024
Tol.
0.010
0.005
5°
0.005
0.005
0.001
0.020
0.005
相關PDF資料 |
PDF描述 |
|---|---|
| D2218UK | CAT6 SOL PC PVC WHI 50FT PVC SOLID PATCH CORD |
| D2219UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場效應管(2.5W-12.5V-1GHz,單端式)) |
| D2219 | METAL GATE RF SILICON FET |
| D2219UK | METAL GATE RF SILICON FET |
| D2220UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場效應管(5W-12.5V-1GHz,單端式)) |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| D2219 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:METAL GATE RF SILICON FET |
| D2219UK | 制造商:TT Electronics/ Semelab 功能描述:MOSFETRFN CHSE12V2.5W1GHZSO8 制造商:TT Electronics/ Semelab 功能描述:MOSFET,RF,N CH,SE,12V,2.5W,1GHZ,SO8 制造商:TT ELECTRONICS 功能描述:MOSFET,RF,N CH,SE,12V,2.5W,1GHZ,SO8, Transistor Type:RF FET, Drain Source Voltag 制造商:TT electronics plc 功能描述:MOSFET,RF,N CH,SE,12V,2.5W,1GHZ,SO8, Transistor Type:RF FET, Drain Source Voltag 制造商:TT Electronics/ Semelab 功能描述:MOSFET,RF,N CH,SE,12V,2.5W,1GHZ,SO8, Transistor Type:RF FET, Drain Source Voltage Vds:40V, Continuous Drain Current Id:2A, Power Dissipation Pd:17.5W, Operating Frequency Min:1MHz, Operating Frequency Max:1GHz, No. of Pins:8, MSL:- , RoHS Compliant: Yes 制造商:TT Electronics / Semelab 功能描述:RF POWER TRANSISTOR MOSFET |
| D221E | 制造商:MPD 制造商全稱:MicroPower Direct, LLC 功能描述:Low Cost, 2W SIP Single & Dual Output DC/DC Converters |
| D221ED | 制造商:MPD 制造商全稱:MicroPower Direct, LLC 功能描述:Very Low Cost, 2W SIP Dual Isolated Output DC/DC Converters |
| D221EI | 制造商:MPD 制造商全稱:MicroPower Direct, LLC 功能描述:Low Cost, 2W SIP High Isolation DC/DC Converters |
發(fā)布緊急采購，3分鐘左右您將得到回復。