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參數資料
| 型號： | D2230 |
| 廠商： | TT electronics Semelab Limited |
| 英文描述： | METAL GATE RF SILICON FET |
| 中文描述： | 金屬門射頻硅場效應管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 17K |
| 代理商： | D2230 |
D2230UK
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
Prelim. 2/99
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
17.5W
40V
±20V
4A
–65 to 150°C
200°C
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 12.5V – 1GHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
VERY LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 10 dB MINIMUM
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 2 GHz
METAL GATE RF SILICON FET
TetraFET
MECHANICAL DATA
Dimensions in mm.
1
2
3
4
3.00
2 PL.
2.07
2 PL.
2 PL.
0.47
0.47
2 PL.
0.10
TYP.
0.381
1.65
2 PL.
5.50 ± 0.15
1.27 ± 0.05
2 PL.
1.27
1.27
0.10 R.
TYP.
0.10
TYP.
6.50 ±
0.15
0.3 R.
1.27
0.80
4 PL.
4.90 ± 0.15
8
7
6
5
0.508
0.360
± 0.005
2.313
± 0.2
F-0127 PACKAGE
PIN 1 – SOURCE
PIN 2 – DRAIN
PIN 3 – DRAIN
PIN 4 – SOURCE
PIN 5 – SOURCE
PIN 6 – GATE
PIN 7 – GATE
PIN 8 – SOURCE
Ceramic Material: Alumina.
Parts can also be supplied with AlN or BeO for
improved thermal resistance.
Contact Semelab for details.
相關PDF資料 |
PDF描述 |
|---|---|
| D2230UK | METAL GATE RF SILICON FET |
| D2231UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場效應管(7.5W-12.5V-1GHz,單端式)) |
| D2231 | METAL GATE RF SILICON FET |
| D2231UK | METAL GATE RF SILICON FET |
| D2232UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-7.2V-850MHz,Single Ended)(鍍金多用DMOS射頻硅場效應管(5W-7.2V-850MHz,單端式)) |
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|---|---|
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| D2231UK | 制造商:TT Electronics / Semelab 功能描述:RF POWER TRANSISTOR MOSFET |
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