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參數資料
| 型號： | D3D7_FDH6626B |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Small Signal Diode |
| 中文描述： | 0.2 A, 75 V, SILICON, SIGNAL DIODE, DO-35 |
| 封裝： | DO-35, 2 PIN |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 42K |
| 代理商： | D3D7_FDH6626B |
2004 Fairchild Semiconductor Corporation
D3D7_FDH6626B, Rev. A1
Small Signal Diode
Absolute Maximum Ratings *
T
A
= 25
°
C unless otherwise noted
* These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Electrical Characteristics
T
A
=25
°
C unless otherwise noted
Symbol
V
RRM
I
F(AV)
I
FSM
Parameter
Value
75
200
Units
V
mA
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
1.0
4.0
A
A
°
C
°
C
T
STG
T
J
-65 to +200
175
Symbol
P
D
R
θ
JA
Parameter
Min.
Max.
500
300
Units
mW
°
C/W
Power Dissipation
Thermal Resistance, Junction to Ambient
Symbol
V
R
V
F
Parameter
Test Conditions
I
R
= 5.0
μ
A
I
F
= 1mA
I
F
= 100mA
V
R
= 50V
V
R
= 75V
V
R
= 0, f = 1.0MHz
I
F
= 10mA, V
R
= 6.0V (600mA)
I
F
= 10mA, R
L
= 100
Min.
75
550
Max.
Units
V
mV
V
nA
μ
A
pF
pC
Breakdown Voltage
Forward Voltage
1.1
50
5.0
2.5
50
I
R
Reverse Leakage
C
T
Q
S
Total Capacitance
Storage Charge
D3D7_FDH6626B
DO-35
COLOR BAND DENOTES CATHODE
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