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參數資料
| 型號： | D44H8 |
| 廠商： | 意法半導體 |
| 英文描述： | NPN SILICON POWER TRANSISTORS |
| 中文描述： | NPN硅功率晶體管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 153K |
| 代理商： | D44H8 |
D
D44H8
NPN Power Amplifier
This device is designed for power amplifier, regulator and switching
circuits where speed is important. Sourced from Process 4Q.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
I
C
Collector-Emitter Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
60
8.0
V
A
°
C
T
J
, T
stg
-55 to +150
TO-220
B
C
E
NZT44H8
B
C
C
SOT-223
E
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
D44H8
60
480
2.1
62.5
*NZT44H8
1.5
12
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
*
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
W
mW/
°
C
°
C/W
°
C/W
R
θ
JC
R
θ
JA
83.3
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
相關PDF資料 |
PDF描述 |
|---|---|
| D44H8 | COMPLEMENTARY SILICON POWER TRANSISTORS |
| D44H8 | POWER TRANSISTORS(10A,30-80V,50W) |
| D44Q1 | TRANSISTOR | BJT | NPN | 125V V(BR)CEO | 4A I(C) | TO-220AB |
| D44Q3 | TRANSISTOR | BJT | NPN | 175V V(BR)CEO | 4A I(C) | TO-220AB |
| D44Q5 | TRANSISTOR | BJT | NPN | 225V V(BR)CEO | 4A I(C) | TO-220AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| D44H8 | 制造商:STMicroelectronics 功能描述:BIPOLAR TRANSISTOR NPN 60V TO-220 制造商:STMicroelectronics 功能描述:BIPOLAR TRANSISTOR, NPN, 60V TO-220 |
| D44H8 | 制造商:Fairchild Semiconductor Corporation 功能描述:Bipolar Transistor |
| D44H8_02 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NPN SILICON POWER TRANSISTORS |
| D44H8_09 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Complementary power transistors |
| D44H8_Q | 功能描述:兩極晶體管 - BJT Power Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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