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參數資料
| 型號： | D45H2A |
| 廠商： | MOSPEC SEMICONDUCTOR CORP. |
| 英文描述： | POWER TRANSISTORS(10A,30V,60W) |
| 中文描述： | 功率晶體管（10A條，30V的，60瓦） |
| 文件頁數： | 1/3頁 |
| 文件大小： | 32K |
| 代理商： | D45H2A |
2002 Fairchild Semiconductor Corporation
Rev. A, February 2002
D
1
TO-220
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CEO
Collector-Emitter Voltage
I
C
Collector Current
T
J
, T
STG
Operating and Storage Junction Temperature Range
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
On Characteristics
h
FE
DC Current Gain
Thermal Characteristics
T
A
=25
°
C unless otherwise noted
Symbol
P
D
Total Device Dissipation
Derate above 25
°
C
R
θ
JC
Thermal Resistance, Junction to Case
R
θ
JA
Thermal Resistance, Junction to Ambient
Parameter
Value
30
8.0
- 55 ~ 150
Units
V
A
°
C
- Continuous
Test Condition
Min.
Typ.
Max.
Units
I
C
= 100mA, IB = 0
V
CB
= 60V, IE = 0
V
EB
= 5V, IC = 0
30
V
μ
A
μ
A
10
100
V
CE
= 5V, I
C
= 8A
V
CE
= 5V, I
C
= 10A
V
CE
= 5V, I
C
= 12A
I
C
= 8A, I
B
= 0.4A
I
C
= 8A, I
B
= 0.8A
100
80
65
V
CE
(sat)
V
BE
(sat)
Small Signal Characteristics
f
T
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
1
V
V
1.5
Current Gain Bandwidth Product
V
CE
= 10V, I
C
= 500mA
25
MHz
Parameter
Max.
60
480
2.1
62.5
Units
W
mW/
°
C
°
C/W
°
C/W
D45H2A
PNP Power Amplifier
This device is designed for power amplifier, regulator and switching
circuits where speed is important.
Sourced from process 5Q.
1. Base 2. Collector 3. Emitter
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| D45H5 | PNP SILICON POWER TRANSISTORS |
| D45H5 | COMPLEMENTARY SILICON POWER TRANSISTORS |
| D45H5 | POWER TRANSISTORS(10A,30-80V,50W) |
| D45H8 | PNP Power Amplifier |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| D45H2A_Q | 功能描述:兩極晶體管 - BJT PNP Power Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| D45H3 | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:POWER TRANSISTORS(10A,30-80V,50W) |
| D45H4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:SPC Multicomp 功能描述:Bipolar Transistor 制造商:SPC Multicomp 功能描述:TRANSISTORPNP10A45VTO220 制造商:SPC Multicomp 功能描述:TRANSISTOR,PNP,10A,45V,TO220 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR, PNP, -45V, TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency Typ ft:12MHz; Power Dissipation Pd:50W; DC Collector Current:10A; DC Current Gain hFE:60; No. of Pins:3 ;RoHS Compliant: Yes |
| D45H5 | 功能描述:兩極晶體管 - BJT PNP General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| D45H7 | 制造商:BOCA 制造商全稱:Boca Semiconductor Corporation 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
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