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參數資料
型號: D45H8
廠商: MOSPEC SEMICONDUCTOR CORP.
英文描述: POWER TRANSISTORS(10A,30-80V,50W)
中文描述: 功率晶體管(10A條,30 - 80V的,50瓦)
文件頁數: 1/4頁
文件大小: 141K
代理商: D45H8
D
D45H8
PNP Power Amplifier
This device is designed for power amplifier, regulator and switching
circuits where speed is important. Sourced from Process 5Q.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
I
C
T
J
, T
stg
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Collector-Emitter Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
60
8.0
V
A
°
C
-55 to +150
TO-220
B
C
E
B
C
C
SOT-223
E
NZT45H8
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
D45H8
60
480
2.1
62.5
*NZT45H8
1.5
12
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
*
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
W
mW/
°
C
°
C/W
°
C/W
R
θ
JC
R
θ
JA
83.3
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
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相關代理商/技術參數
參數描述
D45H8 制造商:Fairchild Semiconductor Corporation 功能描述:Bipolar Transistor
D45H8_03 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:PNP SILICON POWER TRANSISTORS
D45H8E1YFB 制造商:STMicroelectronics 功能描述:
D45H8G 功能描述:兩極晶體管 - BJT 10A 60V 50W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
D45JR1AA 制造商:The Cherry Corporation 功能描述:Switch Snap Action N.O. SPST Button Quick Connect 16A 250VAC 250VDC 372.85VA 0.98N Screw Mount
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