
D5017UK
Document Number 3139
Issue 1
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukSemelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
220W
125V
±20V
18A
–65 to 150°C
200°C
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
150W – 50V – 175MHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 10 dB MINIMUM
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 175 MHz
METAL GATE RF SILICON FET
TetraFET
A
M
F
E
D
C
B
I
H
K
J
G
1
4
3
2
DM
PIN 1
SOURCE
PIN 3
SOURCE
PIN 2
DRAIN
PIN 4
GATE
DIM
A
B
C
D
E
F
G
H
I
J
K
M
mm
24.76
18.42
45
°
6.35
3.17 Dia.
5.71
12.7 Dia.
6.60
0.13
4.32
3.17
26.16
Tol.
0.13
0.13
5
°
0.13
0.13
0.13
0.13
REF
0.02
0.13
0.13
0.25
Inches
0.975
0.725
45
°
0.25
0.125 Dia.
0.225
0.500 Dia.
0.260
0.005
0.170
0.125
1.03
Tol.
0.005
0.005
5
°
0.005
0.005
0.005
0.005
REF
0.001
0.005
0.005
0.010