欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: DA3J102D
廠商: PANASONIC CORP
元件分類: 參考電壓二極管
英文描述: SILICON, VHF BAND, MIXER DIODE
封裝: ROHS COMPLIANT, SMINI3-F2-B, 3 PIN
文件頁數: 1/4頁
文件大小: 487K
代理商: DA3J102D
ZKF00134BED
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: March 2010
1
DA3J102D
Silicon epitaxial planar type
For high speed switching circuits
2 elements anode-common type
DA3X102D in SMini3 type package
Features
Short reverse recovery time trr
Low terminal capacitance Ct
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage
VR
80
V
Maximum peak reverse voltage
VRM
80
V
Forward current
Single
IF
100
mA
Double
150
mA
Peak forward current
Single
IFM
225
mA
Double
340
mA
Non-repetitive peak forward
surge current *
Single
IFSM
500
mA
Double
750
mA
Junction temperature
Tj
150
°
C
Storage temperature
Tstg
–55 to +150
°
C
Note) *: 1 t = 1 s
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
VF
IF = 100 mA
1.2
V
Reverse voltage
VR
IR = 100 A
80
V
Reverse current
IR
VR = 80 V
100
nA
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
15
pF
Reverse recovery time *
trr
IF = 10 mA, VR = 6 V, Irr = 0.25 × IR 
10
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 100 MHz
*: trr measurement circuit
90%
tp = 2 s
tr = 0.35 ns
δ =
0.05
10%
tr
tp
trr
VR
IF
t
A
Bias Application Unit (N-50BU)
Pulse Generator
(PG-10N)
Rs = 50
Wave Form Analyzer
(SAS-8130)
Ri = 50
Input Pulse
Output Pulse
IF = 10 mA
VR = 6 V
Irr = 0.25 × IR
Package
Code
SMini3-F2-B
Pin Name
1: Cathode-1
3: Anode-1
2: Cathode-2
Anode-2
Marking Symbol: 23
Internal Connection
1
2
3
相關PDF資料
PDF描述
DA3J103E SILICON, VHF BAND, MIXER DIODE
DA3X101A SILICON, VHF BAND, MIXER DIODE
DA3X101K SILICON, VHF BAND, MIXER DIODE
DA6/12 1.38 A, 1200 V, SILICON, RECTIFIER DIODE
DA6X102S SILICON, VHF BAND, MIXER DIODE
相關代理商/技術參數
參數描述
DA3J102D0L 功能描述:二極管 - 通用,功率,開關 SWITCH DIODE FLT LD 2.0x2.1mm RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
DA3J103E0L 功能描述:二極管 - 通用,功率,開關 SWITCH DIODE FLT LD 2.0x2.1mm RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
DA3J103EAL 制造商:Panasonic Industrial Company 功能描述:Diode Dual 100mA 80V 10ns SMini3-F2-B
DA3J104F0L 功能描述:二極管 - 通用,功率,開關 Switching Diode RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
DA3J107K0L 功能描述:二極管 - 通用,功率,開關 SWITCH DIODE FLT LD 2.0x2.1mm RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
主站蜘蛛池模板: 黄梅县| 定陶县| 东丰县| 即墨市| 那曲县| 桐城市| 二连浩特市| 满城县| 德昌县| 镇平县| 襄城县| 淳安县| 闻喜县| 安国市| 双流县| 前郭尔| 克什克腾旗| 印江| 瓦房店市| 乐昌市| 平泉县| 承德县| 宣城市| 福清市| 潼关县| 松桃| 黄大仙区| 察隅县| 吉木萨尔县| 普陀区| 沁源县| 延边| 拜城县| 潞西市| 江永县| 灵山县| 前郭尔| 苏尼特右旗| 鸡东县| 三穗县| 汤原县|