| 型號 | 廠商 | 描述 |
| m27c512-25f6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit (64K x8) UV EPROM and OTP EPROM |
| m27c512-25f6e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Ceramic Chip Capacitors / Standard C0G; Capacitance [nom]: 3300pF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 1206; Termination: Tin Plated Nickel Barrier; Body Dimensions: 0.126" x 0.063"; Container: Bulk; Features: Unmarked |
| m27c512-25f6f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-25f6tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-25f6x 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-25n1e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-25n1f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-25n1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-25n1x 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-25n3e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-25n3tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Ceramic Chip Capacitors / Standard C0G; Capacitance [nom]: 0.033uF; Working Voltage (Vdc)[max]: 25V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 1206; Termination: Tin Plated Nickel Barrier; Body Dimensions: 0.126" x 0.063"; Container: Bulk; Features: Unmarked |
| m27c512-25n3x 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-25n6e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-25n6f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | CAP 3.3PF 100V +/-0.25PF NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR |
| m27c512-25n6tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Ceramic Chip Capacitors / Standard C0G; Capacitance [nom]: 3.3pF; Working Voltage (Vdc)[max]: 200V; Capacitance Tolerance: +/-0.25pF; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 1206; Termination: Tin Plated Nickel Barrier; Body Dimensions: 0.126" x 0.063"; Container: Bulk; Features: Unmarked |
| m27c512-25n6x 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-25xb1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-25xb1x 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-25xb3tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-25xb3x 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Ceramic Chip Capacitors / Standard C0G; Capacitance [nom]: 3.3pF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-0.5pF; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 1206; Termination: Tin Plated Nickel Barrier; Body Dimensions: 0.126" x 0.063"; Container: Bulk; Features: Unmarked |
| m27c512-25xb6f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-25xb6tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-25xb6x 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c1024-12n7x 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
意法半導體 | 1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
| m27c1024-12n7tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
意法半導體 | 1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
| m50fw080n5g 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory |
| m27c512-45n3f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | High-Performance IR PIN Photodiode in Subminiature SMT Package |
| m27c512-60n3f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | High-Performance IR PIN Photodiode in Subminiature SMT Package, Gullwing, Tape & Reel |
| m27c512-70n3f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-80n3f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-90n3f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-10n3f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-12n3f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-15n3f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | IR 3/16 Encode/ Decode IC with 16X Clock Generator |
| m27c512-20n3f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-25n3f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m58wr064eb10zb6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| m28w320ebb10n1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w320ebb10n1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| m29f100-b70m3tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory |
| m29f100-t90m3tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory |
| m29f100-b90m3tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | KK 156 Hdr Assy RtAn Bkwy 5 ckt Tin |
| m29f100-t120m3tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory |
| m58wr128etzb 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| m25p16-vmf6tg 2 3 4 5 6 7 |
意法半導體 | 4 Mbit Uniform Sector, Serial Flash Memory |
| m25p16-vmf6tp 2 3 4 5 6 7 |
意法半導體 | 4 Mbit Uniform Sector, Serial Flash Memory |
| m27c1024-70f7tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
意法半導體 | 1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
| m27c1024-80f7tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
意法半導體 | 1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
| m50fw080k5g 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory |
| m50fw080k5t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory |