| 型號 | 廠商 | 描述 |
| tc54vn2202ecbstp 2 3 |
TelCom Semiconductor, Inc. | VOLTAGE DETECTOR |
| tc54vn2202emb 2 3 |
TelCom Semiconductor, Inc. | VOLTAGE DETECTOR |
| tc54vn2202embrtp 2 3 |
TelCom Semiconductor, Inc. | VOLTAGE DETECTOR |
| tc54vn2202embstp 2 3 |
TelCom Semiconductor, Inc. | VOLTAGE DETECTOR |
| tc54vn2202ezb 2 3 |
TelCom Semiconductor, Inc. | VOLTAGE DETECTOR |
| tc54vn3402embrtp 2 3 |
TelCom Semiconductor, Inc. | VOLTAGE DETECTOR |
| tc54vn3402embstp 2 3 |
TelCom Semiconductor, Inc. | VOLTAGE DETECTOR |
| tc54vn3402ezb 2 3 |
TelCom Semiconductor, Inc. | Power MOSFET and Schottky Diode -20 V, Fetky, P-Channel, -4.4A, w/ 4.1 A Schottky Barrier Diode, ChipFET™; Package: ChipFET™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 3000 |
| tc54vn3402ezbstp 2 3 |
TelCom Semiconductor, Inc. | Power MOSFET and Schottky Diode -20 V, Fetky, P-Channel, -4.4A, w/ 4.1 A Schottky Barrier Diode, ChipFET™; Package: ChipFET™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 3000 |
| tc54vn3501ecb 2 3 |
TelCom Semiconductor, Inc. | VOLTAGE DETECTOR |
| tc54vn3501ecbrtp 2 3 |
TelCom Semiconductor, Inc. | PFET CHIPFET FETKY 20V; |
| tc54vn3501ecbstp 2 3 |
TelCom Semiconductor, Inc. | VOLTAGE DETECTOR |
| tc54vn3501emb 2 3 |
TelCom Semiconductor, Inc. | VOLTAGE DETECTOR |
| tc54vn3501embrtp 2 3 |
TelCom Semiconductor, Inc. | VOLTAGE DETECTOR |
| tc54vn3501embstp 2 3 |
TelCom Semiconductor, Inc. | Power MOSFET -20 V, -3.0 A, Dual P-Channel ChipFET™; Package: ChipFET™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 3000 |
| tc54vn3501ezb 2 3 |
TelCom Semiconductor, Inc. | VOLTAGE DETECTOR |
| tc54vn3501ezbrtp 2 3 |
TelCom Semiconductor, Inc. | Power MOSFET 30 V, 3.9 A, Dual N-Channel, ChipFET™; Package: ChipFET™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 3000 |
| tc54vn3501ezbstp 2 3 |
TelCom Semiconductor, Inc. | Power MOSFET 20 V, 4.1 A, Dual N-Channel, ChipFET™; Package: ChipFET™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 3000 |
| tc54vn3502ezbrtp 2 3 |
TelCom Semiconductor, Inc. | Power MOSFET 20 V, 4.1 A, Dual N-Channel, ChipFET™; Package: ChipFET™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 3000 |
| tc54vn3502ezbstp 2 3 |
TelCom Semiconductor, Inc. | Power MOSFET and Schottky Diode 20 V, 3.9 A, N-Channel, w/3.7 A Schottky Barrier Diode, ChipFET™; Package: ChipFET™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 3000 |
| tc54vn3602ecb 2 3 |
TelCom Semiconductor, Inc. | Power MOSFET -20 V, -6.7 A, Single P-Channel ChipFET™; Package: ChipFET™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 3000 |
| tc54vn3602ecbrtp 2 3 |
TelCom Semiconductor, Inc. | Power MOSFET -20 V, -6.7 A, Single P-Channel ChipFET; Package: ChipFET™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 3000 |
| tc54vn3602ecbstp 2 3 |
TelCom Semiconductor, Inc. | VOLTAGE DETECTOR |
| tc54vn4001embstp 2 3 |
TelCom Semiconductor, Inc. | Trench Power MOSFET 12 V, 3.3 A, Single P-Channel, SC88; Package: SC-88/SC70-6/SOT-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 |
| tc54vn4001ezb 2 3 |
TelCom Semiconductor, Inc. | Trench Power MOSFET 12 V, 3.3 A, Single P-Channel, SC88; Package: SC-88/SC70-6/SOT-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 |
| tc54vn4002ecb 2 3 |
TelCom Semiconductor, Inc. | VOLTAGE DETECTOR |
| tc54vn4002ecbrtp 2 3 |
TelCom Semiconductor, Inc. | VOLTAGE DETECTOR |
| tc54vn4002ecbstp 2 3 |
TelCom Semiconductor, Inc. | VOLTAGE DETECTOR |
| tc54vn4002emb 2 3 |
TelCom Semiconductor, Inc. | VOLTAGE DETECTOR |
| tc54vn4002embrtp 2 3 |
TelCom Semiconductor, Inc. | VOLTAGE DETECTOR |
| tc54vn4002embstp 2 3 |
TelCom Semiconductor, Inc. | VOLTAGE DETECTOR |
| tc54vn4002ezb 2 3 |
TelCom Semiconductor, Inc. | Trench Power MOSFET -20 V, -4.2 A, Single P-Channel, SC-88; Package: SC-88/SC70-6/SOT-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 |
| tc54vn4002ezbstp 2 3 |
TelCom Semiconductor, Inc. | Trench Power MOSFET -20 V, -4.2 A, Single P-Channel, SC-88; Package: SC-88/SC70-6/SOT-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 |
| tc54vn4101ecb 2 3 |
TelCom Semiconductor, Inc. | VOLTAGE DETECTOR |
| tc54vn4101ecbstp 2 3 |
TelCom Semiconductor, Inc. | Small Signal MOSFET 25 V, 1.2 A Single N-Channel SC-88; Package: SC-88/SC70-6/SOT-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 |
| tc54vn4101emb 2 3 |
TelCom Semiconductor, Inc. | Small Signal MOSFET 25 V, 1.2 A Single N-Channel SC-88; Package: SC-88/SC70-6/SOT-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 10000 |
| tc54vn4101embstp 2 3 |
TelCom Semiconductor, Inc. | VOLTAGE DETECTOR |
| tc54vn4101ezb 2 3 |
TelCom Semiconductor, Inc. | VOLTAGE DETECTOR |
| tc54vn4102ecbrtp 2 3 |
TelCom Semiconductor, Inc. | Power MOSFET 20 V, 890 mA, Single N-Channel with ESD Protection, SOT-723; Package: SOT-723 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 4000 |
| tc54vn4102ecbstp 2 3 |
TelCom Semiconductor, Inc. | Power MOSFET 20 V, 890 mA, Single N-Channel with ESD Protection, SOT-723; Package: SOT-723 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 8000 |
| tc54vn4102emb 2 3 |
TelCom Semiconductor, Inc. | Power MOSFET 20 V, 780 mA, Single P-Channel with ESD Protection, SOT-723; Package: SOT-723 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 4000 |
| tc54vn4102embrtp 2 3 |
TelCom Semiconductor, Inc. | Power MOSFET -20 V, -780 mA, Single P-Channel with ESD Protection, SOT-723; Package: SOT-723 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 8000 |
| tc54vn4102embstp 2 3 |
TelCom Semiconductor, Inc. | VOLTAGE DETECTOR |
| tc54vn4102ezb 2 3 |
TelCom Semiconductor, Inc. | VOLTAGE DETECTOR |
| tc54vn4102ezbstp 2 3 |
TelCom Semiconductor, Inc. | Power MOSFET 20 V, 5.8 A/4.6 A Dual N-Channel, DFN6 3x3 mm Package; Package: DFN6 3*3 MM, 0.95 PITCH; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 |
| tc54vn4301ecbstp 2 3 |
TelCom Semiconductor, Inc. | Power MOSFET 20 V, 5.8 A/4.6 A Dual N-Channel, DFN6 3x3 mm Package; Package: DFN6 3*3 MM, 0.95 PITCH; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 |
| tc54vn4301emb 2 3 |
TelCom Semiconductor, Inc. | Power MOSFET, 8V, 4.3A, °COOL™High Side Load Switch with Level Shift, 2x2mm WDFN Package; Package: 6 Pin WDFN, 2x2, 0.65P; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 |
| tc54vn4301embstp 2 3 |
TelCom Semiconductor, Inc. | Power MOSFET -20 V, -4.1 A, µCool™ Dual P-Channel, 2x2 mm WDFN Package; Package: WDFN6, 2 x 2 x 0.75 mm, 0.65 mm Pitch; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 |
| tc54vn4301ezb 2 3 |
TelCom Semiconductor, Inc. | Power MOSFET -20 V, -4.1 A, µCool™ Dual P-Channel, 2x2 mm WDFN Package; Package: WDFN6, 2 x 2 x 0.75 mm, 0.65 mm Pitch; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 |
| tc54vn4302ecbstp 2 3 |
TelCom Semiconductor, Inc. | Power MOSFET 20 V/-20 V, 4.6 A/-4.1 A, µCool™ Complementary, 2x2 mm, WDFN Package; Package: WDFN6, 2 x 2 x 0.75 mm, 0.65 mm Pitch; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 |