| 型號 | 廠商 | 描述 |
| psd935g3-a-15u 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-a-90ji 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-a-90m 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-a-90mi 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-a-90u 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-a-90ui 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-b-12j 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-b-12ji 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-b-12m 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 51pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate |
| psd935g3-b-12mi 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-b-12u 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-b-12ui 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-b-15b81 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-b-15b81i 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-b-15j 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-b-15ji 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-b-15m 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-b-15mi 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-b-15u 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-b-15ui 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-b-90m 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-b-90mi 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-b-90u 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-b-90ui 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 510pF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Solder Coated (Sn/Pb, 70/30); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate |
| psd935g3-c-12j 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-c-12ji 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-c-12m 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-c-12mi 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-c-12u 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-c-12ui 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-c-15b81 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-c-15b81i 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-c-15j 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-c-15ji 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-c-15m 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 510pF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate |
| psd935g3-c-15mi 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-c-15u 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-c-15ui 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-c-20b81 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 510pF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate |
| psd935g3-c-90mi 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-c-90u 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3-c-90ui 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3v-12b81 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3v-12b81i 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3v-12j 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3v-12ji 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3v-12m 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3v-12mi 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3v-12u 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3v-12ui 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |