| 型號 | 廠商 | 描述 |
| k4h511638e-tlb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
| k4h510438c-uca2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mb C-die DDR SDRAM Specification |
| k4h510438c-ucb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mb C-die DDR SDRAM Specification |
| k4h510438c-ucb3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mb C-die DDR SDRAM Specification |
| k4h510438 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mb B-die DDR SDRAM Specification |
| k4h510438a-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER SINGLE 200mW 5.1Vz 0.05mA-Izt 0.05 5uA-Ir 3 SOD-323 3K/REEL |
| k4h510438a-tca2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | ENCLOSURE, DIN IP65 9 MODULEENCLOSURE, DIN IP65 9 MODULE; Length / Height, external:200mm; Width, external:190mm; Depth, external:105mm; Material:Polycarbonate; Colour:Light Grey; RAL number:7035 |
| k4h510438a-tcb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Enclosures; For Use With:MNX Series Polycarbonate Enclosures; Approval Bodies:UL, CSA; External Height:3.9"; External Width:1.9"; Panel Height:3.9"; Panel Width:1.9"; Size/Dimensions:39 x 1.9; Enclosure Color:Silver |
| k4h510438a-tla0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Enclosures; For Use With:MNX Series Polycarbonate Enclosures; Approval Bodies:UL, CSA; External Height:3.9"; External Width:3.9"; Panel Height:3.9"; Panel Width:3.9"; Size/Dimensions:3.9 x 3.9; Enclosure Color:Silver |
| k4h510438a-tla2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIN RAIL - DIN 35 |
| k4h510438a-tlb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Enclosures; For Use With:MNX Series Polycarbonate Enclosures; Approval Bodies:UL, CSA; External Height:5.8"; External Width:3.9"; Panel Height:5.8"; Panel Width:5.8"; Size/Dimensions:5.8 x 5.8; Enclosure Color:Silver |
| k4h510438b-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Enclosure; For Use With:PC17/16-L3, -3, -LFC3, FC3 Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:5.4"; External Width:5.2"; Features:Impact Resistant EN 50102; UV Resistant to UL 508 |
| k4h510438b-tca2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Enclosure; For Use With:PC21/28-1 USA Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:7.9"; External Width:5.6"; Features:Impact Resistant EN 50102; UV Resistant to UL 508 |
| k4h510438b-tcb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Enclosures; For Use With:PC30/25-1 USA Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:11.4"; External Width:7.5"; Features:Impact Resistant EN 50102; UV Resistant to UL 508 RoHS Compliant: Yes |
| k4h510438b-tla0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Enclosures; For Use With:PC36/31-1 USA Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; Features:Impact Resistant EN 50102; UV Resistant to UL 508; Approval Categories:Flammability Rated UL94-5V; Protection Rated IP65 |
| k4h510438b-tla2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
| k4h510438b-tlb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | MOUNTING PLATE, STEEL, FOR TA201610; Length / Height, external:170mm; Material:Steel; Thickness, material:1.5mm; Width, external:140mm RoHS Compliant: Yes |
| k4h510438d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mb D-die DDR SDRAM Specification |
| k4h510838d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mb D-die DDR SDRAM Specification |
| k4h510738e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-MSOP-PowerPAD -40 to 125 |
| k4h510838d-la2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| k4h510838d-lb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| k4h511638d-ucc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| k4h510838c-uc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mb C-die DDR SDRAM Specification |
| k4h510838c-zlcc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIN Audio Connector; No. of Contacts:7; Contact Termination:Solder; Mounting Type:Cable; Gender:Male RoHS Compliant: Yes |
| k4h510838c-zlb3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Connector Kit; Contents Of Kit:C14610G0245008 24 position hood PG 21 double latch high profile side entry, C14610A0241021 24 position male insert wire protect, VN162100014 PG 21 gland bushing, For 0.433" - 0.866" diameter cable RoHS Compliant: Yes |
| k4h510838c-zccc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mb C-die DDR SDRAM Specification |
| k4h510838c-zcb3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mb C-die DDR SDRAM Specification |
| k4h510838m-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER DUAL COMMON-CATHODE 300mW 6.2Vz 5mA-Izt 0.0645 0.1uA-Ir 2 SOT-23 3K/REEL |
| k4h510838c-uca2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mb C-die DDR SDRAM Specification |
| k4h510838c-uccc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mb C-die DDR SDRAM Specification |
| k4h510838e-tca2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-SOIC 0 to 70 |
| k4h510838e-tcb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-PDIP 0 to 70 |
| k4h510838e-tla0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-PDIP 0 to 70 |
| k4h510838e-tla2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 10-MSOP-PowerPAD -40 to 125 |
| k4h510838e-tlb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 10-MSOP-PowerPAD -40 to 125 |
| k4h510838m-tca2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-PDIP -40 to 125 |
| k4h510838m-tcb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-PDIP -40 to 125 |
| k4h510838m-tla0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 8-Bit, 31 kSPS ADC Serial Out, Microprocessor Peripheral/Standalone, Single Channels 8-SOIC |
| k4h510838m-tla2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 8-Bit, 31 kSPS ADC Serial Out, Microprocessor Peripheral/Standalone, Single Channels 8-SOIC |
| k4h510838m-tlb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 8-Bit, 31 kSPS ADC Serial Out, Microprocessor Peripheral/Standalone, Single Channels 8-SOIC |
| k4h510838d-uc0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| k4h511638d-uc0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| k4h510838d-uc2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| k4h511638d-uc2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| k4h510838a-tca2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-MSOP-PowerPAD -40 to 125 |
| k4h510838a-tcb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC -40 to 125 |
| k4h510838a-tla0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC -40 to 125 |
| k4h510838a-tla2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-PDIP -40 to 125 |
| k4h510838a-tlb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-PDIP -40 to 125 |