| 型號 | 廠商 | 描述 |
| tc40107bp 2 3 |
Toshiba Corporation | C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
| tc551001fi-10l 2 3 4 5 6 7 8 9 10 |
x8 SRAM | |
| tc551001fl-10 2 3 4 5 6 7 8 9 10 |
x8 SRAM | |
| tc551001fl-10l 2 3 4 5 6 7 8 9 10 |
x8 SRAM | |
| tc551001fl-70 2 3 4 5 6 7 8 9 10 |
x8 SRAM | |
| tc551001fl-85 2 3 4 5 6 7 8 9 10 |
x8 SRAM | |
| tc551001fl-85l 2 3 4 5 6 7 8 9 10 |
x8 SRAM | |
| tc551001pi-10l 2 3 4 5 6 7 8 9 10 |
x8 SRAM | |
| tc551001pl-10 2 3 4 5 6 7 8 9 10 |
x8 SRAM | |
| tc551001pl-10l 2 3 4 5 6 7 8 9 10 |
x8 SRAM | |
| tc551001pl-70 2 3 4 5 6 7 8 9 10 |
x8 SRAM | |
| tc551001pl-85 2 3 4 5 6 7 8 9 10 |
x8 SRAM | |
| tc551001pl-85l 2 3 4 5 6 7 8 9 10 |
x8 SRAM | |
| tc5565 2 3 4 5 6 7 8 9 |
Toshiba Corporation | 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
| tc5565afl-10 2 3 4 5 6 7 8 9 |
Toshiba Corporation | 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
| tc5565afl-12 2 3 4 5 6 7 8 9 |
Toshiba Corporation | 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
| tc5565afl-15 2 3 4 5 6 7 8 9 |
Toshiba Corporation | 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
| tc5565apl-10 2 3 4 5 6 7 8 9 |
Toshiba Corporation | 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
| tc5565apl-12 2 3 4 5 6 7 8 9 |
Toshiba Corporation | 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
| tc5565apl-15 2 3 4 5 6 7 8 9 |
Toshiba Corporation | 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
| tc5565apl 2 3 4 5 6 7 8 9 |
Toshiba Corporation | 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
| tc55v1325ff 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Toshiba Corporation | 32,768-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM |
| tc55v1325ff-10 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Toshiba Corporation | 32,768-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM |
| tc55v1325ff-12 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Toshiba Corporation | 32,768-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM |
| tc55v1325ff-7 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Toshiba Corporation | 32,768-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM |
| tc55v1325ff-8 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Toshiba Corporation | 32,768-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM |
| tc55v2161fti-10 2 3 4 5 6 7 8 9 10 |
Toshiba Corporation | 131,072 WORD BY 16 BIT STATIC RAM |
| tc55v2161fti-10l 2 3 4 5 6 7 8 9 10 |
Toshiba Corporation | 131,072 WORD BY 16 BIT STATIC RAM |
| tc55v2161fti-85 2 3 4 5 6 7 8 9 10 |
Toshiba Corporation | 131,072 WORD BY 16 BIT STATIC RAM |
| tc55v2161fti-85l 2 3 4 5 6 7 8 9 10 |
Toshiba Corporation | 131,072 WORD BY 16 BIT STATIC RAM |
| tc55v2161ft-10 2 3 4 5 6 7 8 9 10 |
Toshiba Corporation | 131,072 WORD BY 16 BIT STATIC RAM |
| tc55v2161ft-10l 2 3 4 5 6 7 8 9 10 |
Toshiba Corporation | 131,072 WORD BY 16 BIT STATIC RAM |
| tc55v2161ft-85 2 3 4 5 6 7 8 9 10 |
Toshiba Corporation | 131,072 WORD BY 16 BIT STATIC RAM |
| tc55v2161ft-85l 2 3 4 5 6 7 8 9 10 |
Toshiba Corporation | 131,072 WORD BY 16 BIT STATIC RAM |
| tc55v2325ff 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Toshiba Corporation | TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| tc55v2325ff-100 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
Toshiba Corporation | TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| tc55v328bft-12 2 3 4 5 6 7 8 9 |
Toshiba Corporation | 32,768 WORD-8 BIT STATIC RAM |
| tc55v328bft-15 2 3 4 5 6 7 8 9 |
Toshiba Corporation | 32,768 WORD-8 BIT STATIC RAM |
| tc55v328bj 2 3 4 5 6 7 8 9 |
Toshiba Corporation | 32,768 WORD-8 BIT STATIC RAM |
| tc55v328bj-12 2 3 4 5 6 7 8 9 |
Toshiba Corporation | 32,768 WORD-8 BIT STATIC RAM |
| tc55v328bj-15 2 3 4 5 6 7 8 9 |
Toshiba Corporation | 32,768 WORD-8 BIT STATIC RAM |
| tc55v8128bft-10 2 3 4 5 6 7 8 9 10 |
Toshiba Corporation | TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| tc55v8128bft-12 2 3 4 5 6 7 8 9 10 |
Toshiba Corporation | TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| tc55v8128bft-15 2 3 4 5 6 7 8 9 10 |
Toshiba Corporation | ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% |
| tc55v8128bj-15 2 3 4 5 6 7 8 9 10 |
Toshiba Corporation | TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| tc74ac02ft 2 3 4 5 6 |
Toshiba Corporation | CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
| tc74ac02p 2 3 4 5 6 |
Toshiba Corporation | CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
| tc74ac139ft 2 3 4 5 6 7 8 9 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 21.54 to 22.47; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| tc74ac139p_07 2 3 4 5 6 7 8 9 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 22.93 to 25.57; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| tc74ac153p_07 2 3 4 5 6 7 8 9 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 3.70 to 4.10; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |