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參數資料
| 型號： | DB1008 |
| 英文描述： | 10 AMP SILICON BRIDGE RECTIFIERS |
| 中文描述： | 10安培硅橋式整流器 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 99K |
| 代理商： | DB1008 |
FEATURES
Data Sheet No. BRDB-1000-1B
ABDB-1000-1B
MECHANICAL SPECIFICATION
Tel.: (310) 767-1052
Fax: (310) 767-7958
DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Gardena, CA 90248
U.S.A
ACTUAL SIZE
F35
PRV Ratings from 50 to 1000 Volts
Surge overload rating to 150 Amps peak
Reliable low cost molded plastic construction
Ideal for printed circuit board applications
Case: Molded plastic, U/L Flammability Rating 94V-0
Terminals: Round silver plated copper pins
Soldering: Per MIL-STD 202 Method 208 guaranteed
Polarity: Marked on side of case; positive lead at beleveled corner
Mounting Position: Any. Through hole provided for #6 screw
Weight: 0.18 Ounces (5.4 Grams)
MECHANICAL DATA
BH
LL
LD
D1
D1
BL
BL
+
_
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
Ratingsat25°Cambienttemperature unlessotherwisespecified.
Single phase, half wave,60Hz, resistive or inductive load.
Forcapacitive loads, derate currentby20%.
Average Forward
Rectified Current
Junction Operating and Storage Temperature Range
Peak Forward Surge Current (8.3 mSec single half sine wave
superimposed on rated load)
T
J
, T
STG
I
O
°C
-55 to +150
Continuous Power Dissipation in V
@ T
=80 C (Heat Sink Temp)
HS
Region
(BR)
o
PARAMETER (TEST CONDITIONS)
Maximum DC Blocking Voltage
Maximum Peak Recurrent Reverse Voltage
Working Peak Reverse Voltage
Series Number
V
RWM
V
RRM
V
R (RMS)
V
RM
SYMBOL
ADB ADB ADB
1004 1006 1008 1000 1001 1002 1004 1006 1008 1010
DB
DB
DB
DB
DB
DB
DB
AMPS
UNITS
VOLTS
P
RM
P
R
1000
400
600
800
50
100
200
400
600
800
RMS Reverse Voltage
500
n/a
n/a
280
420
560
35
70
140
280
420
700
560
Power Dissipation in V
Region for 100 S Square Wave
(BR)
CONTROLLED
AVALANCHE
NON-CONTROLLED
AVALANCHE
2
WATTS
Thermal Energy (Rating for Fusing)
I t
2
64
AMPS
SEC
2
I
FSM
150
@ T = 50 C (Note 1)
A
@ T = 100 C (Note 1); T = 50 C (Note 2)
10
8
Typical Thermal Resistance (on Heat Sink)
R
θ
JA
R
θ
JC
V
FM
Maximum Forward Voltage (Per Diode) at 5 Amps DC
VOLTS
VOLTS
n/a
n/a
Minimum Avalanche Voltage
Maximum Avalanche Voltage
V
(BR) Min
V
(BR) Max
Maximum Reverse Current at Rated V
RM
@ T = 25 C
A
@T = 100 C
A
o
o
I
RM
Minimum Insulation Breakdown Voltage (Circuit to Case)
V
ISO
Junction to Ambient
Junction to Case
450
650
850
900 1100 1300
1.1
5
1
μ
A
mA
2000
o
C/W
2.5
5.0
4.97fbrdb010
NOTES: (1) Unit Mounted on Metal Chassis
(2) Unit Mounted on PC Board
RATINGS
+
_
SERIES DB1000-DB1010 and ADB1004-ADB1008
DT
DB1004
AC
AC
UL RECOGNIZED - FILE #E124962
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