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參數資料
| 型號： | DBDD200S65K1 |
| 英文描述： | IGBT Module |
| 中文描述： | IGBT模塊 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 141K |
| 代理商： | DBDD200S65K1 |
1
Technische Information / technical information
DD200S33K2C
IGBT-modules
IGBT-Module
prepared by: Jürgen Biermann
approved by: Christoph Lübke
date of publication: 2003-6-13
revision: 2.0
Vorlufige Daten
preliminary data
Diode-Wechselrichter / diode-inverter
Hchstzulssige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
TY = 25°C
TY = -25°C
V￠
3300
3300
V
Dauergleichstrom
DC forward current
I
200
A
Periodischer Spitzenstrom
repetitive peak forward current
t = 1 ms
I￠
400
A
Grenzlastintegral
I2t - value
V = 0 V, t = 10 ms, TY = 125°C
I2t
14,0
kA2s
Spitzenverlustleistung
maximum power dissipation
TY = 125°C
P￠
400
kW
Mindesteinschaltdauer
minimum turn-on time
tóò íò
10,0
μs
Charakteristische Werte / characteristic values
Durchlassspannung
forward voltage
min.
typ.
2,80
2,80
max.
3,50
3,50
I = 200 A, V = 0 V, TY = 25°C
I = 200 A, V = 0 V, TY = 125°C
V
V
V
Rückstromspitze
peak reverse recovery current
I = 200 A, - di/dt = 1100 A/μs
V = 1800 V, V = -15 V, TY = 25°C
V = 1800 V, V = -15 V, TY = 125°C
I￠
275
325
A
A
Sperrverzgerungsladung
recovered charge
I = 200 A, -di/dt = 1100 A/μs
V = 1800 V, V = -15 V, TY = 25°C
V = 1800 V, V = -15 V, TY = 125°C
Q
120
220
μC
μC
Abschaltenergie pro Puls
reverse recovery energy
I = 200 A, -di/dt = 1100 A/μs
V = 1800 V, V = -15 V, TY = 25°C
V = 1800 V, V = -15 V, TY = 125°C
Etê
125
255
mJ
mJ
Innerer Wrmewiderstand
thermal resistance, junction to case
pro Diode
per diode
Rúì
110
K/kW
übergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro Diode / per diode
eèùút = 1 W/(m·K) / etèùt = 1 W/(m·K)
Rúì
33,0
K/kW
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