
I
C, nom
I
C
300
480
A
A
min.
typ.
max.
-
1,7
2,15
V
-
2,0
-
V
V
GES
5,0
5,8
1200
I
CRM
600
+/- 20
Technische Information / technical information
DF300R12KE3
IGBT-Module
IGBT-Modules
V
R
= 0V, t
p
= 10ms, T
vj
= 125°C
Periodischer Spitzenstrom
repetitive peak forward current
Gesamt Verlustleistung
total power dissipation
Gate Emitter Spitzenspannung
gate emitter peak voltage
V
CEsat
Charakteristische Werte / characteristic values
approved: SM TM; Wilhelm Rusche
Transistor Wechselrichter / transistor inverter
date of publication: 2002-10-02
Kollektor Emitter Sttigungsspannung
collector emitter saturation voltage
I
C
= 300A, V
GE
= 15V, T
vj
= 25°C
V
CES
V
Elektrische Eigenschaften / electrical properties
T
c
= 25°C
I
C
= 12mA, V
CE
= V
GE
, T
vj
= 25°C
DC collector current
Kollektor Emitter Reststrom
collector emitter cut off current
prepared by: MOD-D2; Mark Münzer
repetitive peak collector current
t
p
= 1ms, T
c
= 80°C
Periodischer Kollektor Spitzenstrom
Dauergleichstrom
DC forward current
Hchstzulssige Werte / maximum rated values
Kollektor Emitter Sperrspannung
collector emitter voltage
T
c
= 80°C
Kollektor Dauergleichstrom
T
vj
= 25°C
A
A
300
-
W
A
1470
V
T
c
= 25°C; Transistor
I
F
P
tot
Grenzlastintegral
I2t value
gate threshold voltage
V
GE(th)
I2t
Isolations Prüfspannung
insulation test voltage
RMS, f= 50Hz, t= 1min.
V
ISOL
Gate Schwellenspannung
t
p
= 1ms
-
-
2,8
2,5
600
I
FRM
I
C
= 300A, V
GE
= 15V, T
vj
= 125°C
Q
G
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V
mA
-
μC
19
k A2s
kV
6,5
V
nF
nF
Gateladung
gate charge
V
GE
= -15V...+15V
Gate Emitter Reststrom
gate emitter leakage current
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
reverse transfer capacitance
Rückwirkungskapazitt
Eingangskapazitt
input capacitance
V
CE
= 1200V, V
GE
= 0V, T
vj
= 25°C
revision: 3.0
5
-
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V
-
0,85
C
res
I
CES
-
21
C
ies
-
-
-
400
nA
I
GES
1 (8)
DB_DF300R12KE3_3.0
2002-10-02