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參數資料
| 型號： | DBFD400R65KF1K |
| 英文描述： | IGBT Module |
| 中文描述： | IGBT模塊 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 270K |
| 代理商： | DBFD400R65KF1K |
1
Technische Information / technical information
FD400R33KF2C
IGBT-modules
IGBT-Module
prepared by: Jürgen Biermann
approved by: Christoph Lübke
date of publication: 2003-6-13
revision: 2.0
Vorlufige Daten
preliminary data
IGBT-Wechselrichter / IGBT-inverter
Hchstzulssige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TY = 25°C
TY = -25°C
V
3300
3300
V
Kollektor-Dauergleichstrom
DC-collector current
T = 80°C
T = 25°C
I òó
I
400
660
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t = 1 ms, T = 80°C
I￠
800
A
Gesamt-Verlustleistung
total power dissipation
T = 25°C
Púóú
4,80
kW
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
+/-20
V
Charakteristische Werte / characteristic values
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
min.
typ.
max.
I = 400 A, V = 15 V, TY = 25°C
I = 400 A, V = 15 V, TY = 125°C
V ùèú
3,40
4,30
4,25
5,00
V
V
Gate-Schwellenspannung
gate threshold voltage
I = 40,0 mA, V = V, TY = 25°C
Vúì
4,2
5,1
6,0
V
Gateladung
gate charge
V = -15 V ... +15 V, V = 1800V
Q
8,00
μC
Interner Gatewiderstand
internal gate resistor
TY = 25°C
Ríòú
1,3
Eingangskapazitt
input capacitance
f = 1 MHz, TY = 25°C, V = 25 V, V = 0 V
Cítù
50,0
nF
Rückwirkungskapazitt
reverse transfer capacitance
f = 1 MHz, TY = 25°C, V = 25 V, V = 0 V
Ctù
2,70
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V = 3300 V, V = 0 V, TY = 25°C
I
5,0
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V = 0 V, V = 20 V, TY = 25°C
I
400
nA
Einschaltverzgerungszeit (ind. Last)
turn-on delay time (inductive load)
I = 400 A, V = 1800 V
V = ±15 V, Róò = 2,7 , C = 68,0 nF, TY = 25°C
V = ±15 V, Róò = 2,7 , C = 68,0 nF, TY = 125°C
tá óò
0,28
0,28
μs
μs
Anstiegszeit (induktive Last)
rise time (inductive load)
I = 400 A, V = 1800 V
V = ±15 V, Róò = 2,7 , C = 68,0 nF, TY = 25°C
V = ±15 V, Róò = 2,7 , C = 68,0 nF, TY = 125°C
t
0,18
0,20
μs
μs
Abschaltverzgerungszeit (ind. Last)
turn-off delay time (inductive load)
I = 400 A, V = 1800 V
V = ±15 V, Ró = 3,6 , C = 68,0 nF, TY = 25°C
V = ±15 V, Ró = 3,6 , C = 68,0 nF, TY = 125°C
tá ó
1,55
1,70
μs
μs
Fallzeit (induktive Last)
fall time (inductive load)
I = 400 A, V = 1800 V
V = ±15 V, Ró = 3,6 , C = 68,0 nF, TY = 25°C
V = ±15 V, Ró = 3,6 , C = 68,0 nF, TY = 125°C
t
0,20
0,20
μs
μs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I = 400 A, V = 1800 V, L = 60 nH
V = ±15 V, Róò = 2,7 , C = 68,0 nF, TY = 25°C
V = ±15 V, Róò = 2,7 , C = 68,0 nF, TY = 125°C
Eóò
470
730
mJ
mJ
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I = 400 A, V = 1800 V, L = 60 nH
V = ±15 V, Ró = 3,6 , C = 68,0 nF, TY = 25°C
V = ±15 V, Ró = 3,6 , C = 68,0 nF, TY = 125°C
Eó
430
510
mJ
mJ
Kurzschluverhalten
SC data
t ù 10 μs, V ù 15 V
TYù125°C, V = 2500 V, Vèà = V -Lù ·di/dt
I
2000
A
Innerer Wrmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
Rúì
26,0 K/kW
übergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro IGBT / per IGBT
eèùút = 1 W/(m·K) / etèùt = 1 W/(m·K)
Rúì
12,0
K/kW
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