
I
C, nom
I
C
400
650
A
A
min.
typ.
max.
-
1,7
2,15
V
-
2,0
-
V
gate emitter leakage current
Gate Emitter Reststrom
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
I
GES
-
-
400
nA
-
collector emitter cut off current
Kollektor Emitter Reststrom
V
CE
= 1200V, V
GE
= 0V, T
vj
= 25°C
I
CES
1,1
-
nF
-
5
mA
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V
C
res
reverse transfer capacitance
-
μC
gate charge
Eingangskapazitt
input capacitance
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V
C
ies
-
28
-
nF
revision: 3.1
Transistor Wechselrichter / transistor inverter
date of publication: 2002-08-07
Kollektor Emitter Sttigungsspannung
collector emitter saturation voltage
I
C
= 400A, V
GE
= 15V, T
vj
= 25°C
prepared by: MOD-D2; Mark Münzer
Gate Schwellenspannung
gate threshold voltage
Gateladung
V
GE
= -15V...+15V
Rückwirkungskapazitt
P
tot
2250
repetitive peak forward current
kV
2,5
V
GES
Gesamt Verlustleistung
total power dissipation
Gate Emitter Spitzenspannung
gate emitter peak voltage
V
CES
A
I
CRM
1200
V
Technische Information / technical information
FZ400R12KE3
IGBT-Module
IGBT-Modules
Charakteristische Werte / characteristic values
approved: SM TM; Wilhelm Rusche
V
R
= 0V, t
p
= 10ms, T
vj
= 125°C
Isolations Prüfspannung
insulation test voltage
RMS, f= 50Hz, t= 1min.
I
C
= 16mA, V
CE
= V
GE
, T
vj
= 25°C
I
C
= 400A, V
GE
= 15V, T
vj
= 125°C
Periodischer Spitzenstrom
V
CEsat
V
ISOL
5,0
T
c
= 25°C
DC collector current
Hchstzulssige Werte / maximum rated values
Kollektor Emitter Sperrspannung
collector emitter voltage
T
c
= 80°C
Kollektor Dauergleichstrom
Elektrische Eigenschaften / electrical properties
T
vj
= 25°C
W
V
+/- 20
A
V
800
Dauergleichstrom
DC forward current
I
F
400
T
c
= 25°C; Transistor
repetitive peak collector current
t
p
= 1ms, T
c
= 80°C
Periodischer Kollektor Spitzenstrom
31
k A2s
t
p
= 1ms
I
FRM
800
A
Grenzlastintegral
I2t value
6,5
5,8
3,7
I2t
V
GE(th)
Q
G
-
-
1 (8)
DB_FZ400R12KE3_3.1
2002-08-07