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參數資料
| 型號： | DBFZ800R33KF2V |
| 英文描述： | IGBT Module |
| 中文描述： | IGBT模塊 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 234K |
| 代理商： | DBFZ800R33KF2V |
1
Technische Information / technical information
FZ800R12KE3
IGBT-Module
IGBT-modules
prepared by: Martin Knecht
approved by: Wilhelm Rusche
date of publication: 2003-8-26
revision: 2.0
Vorlufige Daten
preliminary data
IGBT-Wechselrichter / IGBT-inverter
Hchstzulssige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TY = 25°C
V
1200
V
Kollektor-Dauergleichstrom
DC-collector current
T = 80°C
T = 25°C
I òó
I
800
1200
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t = 1 ms, T = 80°C
I￠
1600
A
Gesamt-Verlustleistung
total power dissipation
T = 25°C
Púóú
3550
W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
+/-20
V
Charakteristische Werte / characteristic values
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
I = 800 A, V = 15 V, TY = 25°C
I = 800 A, V = 15 V, TY = 125°C
V ùèú
1,70
2,00
2,15
V
V
Gate-Schwellenspannung
gate threshold voltage
I = 32,0 mA, V = V, TY = 25°C
Vúì
5,0
5,8
6,5
V
Gateladung
gate charge
V = -15 V ... +15 V
Q
7,40
μC
Interner Gatewiderstand
internal gate resistor
TY = 25°C
Ríòú
0,94
Eingangskapazitt
input capacitance
f = 1 MHz, TY = 25°C, V = 25 V, V = 0 V
Cítù
56,0
nF
Rückwirkungskapazitt
reverse transfer capacitance
f = 1 MHz, TY = 25°C, V = 25 V, V = 0 V
Ctù
2,30
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V = 1200 V, V = 0 V, TY = 25°C
I
5,0
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V = 0 V, V = 20 V, TY = 25°C
I
400
nA
Einschaltverzgerungszeit (ind. Last)
turn-on delay time (inductive load)
I = 800 A, V = 600 V
V = ±15 V, Róò = 3,6 , TY = 25°C
V = ±15 V, Róò = 3,6 , TY = 125°C
tá óò
0,24
0,25
μs
μs
Anstiegszeit (induktive Last)
rise time (inductive load)
I = 800 A, V = 600 V
V = ±15 V, Róò = 3,6 , TY = 25°C
V = ±15 V, Róò = 3,6 , TY = 125°C
t
0,18
0,19
μs
μs
Abschaltverzgerungszeit (ind. Last)
turn-off delay time (inductive load)
I = 800 A, V = 600 V
V = ±15 V, Ró = 0,91 , TY = 25°C
V = ±15 V, Ró = 0,91 , TY = 125°C
tá ó
0,79
0,80
μs
μs
Fallzeit (induktive Last)
fall time (inductive load)
I = 800 A, V = 600 V
V = ±15 V, Ró = 0,91 , TY = 25°C
V = ±15 V, Ró = 0,91 , TY = 125°C
t
0,12
0,20
μs
μs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I = 800 A, V = 600 V, L = 85 nH
V = ±15 V, Róò = 3,6 , TY = 25°C
V = ±15 V, Róò = 3,6 , TY = 125°C
Eóò
85,0
mJ
mJ
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I = 800 A, V = 600 V, L = 85 nH
V = ±15 V, Ró = 0,91 , TY = 25°C
V = ±15 V, Ró = 0,91 , TY = 125°C
Eó
125
mJ
mJ
Kurzschluverhalten
SC data
t ù 10 μs, V ù 15 V
TYù125°C, V = 900 V, Vèà = V -Lù ·di/dt
I
3200
A
Innerer Wrmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
Rúì
0,035 K/W
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