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參數(shù)資料
| 型號： | DD28F032SA |
| 廠商： | Intel Corp. |
| 英文描述： | 32-Mbit (2 Mbit x 16,4 Mbit x 8) FlashFile Memory(32-M位 (2 M位 x 16,4 M位 x 8) FlashFile存儲器) |
| 中文描述： | 32兆位（2兆x 16.4兆位× 8）FlashFile內(nèi)存（32米位（2米位x 16,4 M位× 8）FlashFile存儲器） |
| 文件頁數(shù)： | 1/49頁 |
| 文件大小： | 736K |
| 代理商： | DD28F032SA |
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E
SEE NEW DESIGN RECOMMENDATIONS
December 1997
Order Number: 290490-006
n
User-Selectable 3.3 V or 5 V V
CC
n
User-Configurable x8 or x16 Operation
n
70 ns Maximum Access Time
n
28.6 MB/sec Burst Write Transfer Rate
n
1 Million Typical Erase Cycles per Block
n
56-Lead, 1.2 x 14 x 20 mm Advanced
Dual Die TSOP Package Technology
n
64 Independently Lockable Blocks
n
Revolutionary Architecture
100% Backwards-Compatible with
Intel 28F016SA
Pipelined Command Execution
Program during Erase
n
2 mA Typical I
CC
in Static Mode
n
2 μA Typical Deep Power-Down
n
State-of-the-Art 0.6 μm ETOX IV Flash
Technology
Intel’s DD28F032SA 32-Mbit FlashFile memory is a revolutionary architecture which enables the design of
truly mobile, high performance, personal computing and communication products. With innovative
capabilities, low power operation and very high read/program performance, the DD28F032SA is also the ideal
choice for designing embedded mass storage flash memory systems.
The DD28F032SA is the result of highly-advanced packaging innovation which encapsulates two 28F016SA
die in a single Dual Die Thin Small Outline Package (DDTSOP).
The DD28F032SA is the highest density, highest performance nonvolatile read/program solution for solid-
state storage applications. Its symmetrically-blocked architecture (100% compatible with the 28F016SA
16-Mbit FlashFile memory), very high-cycling, low-power 3.3 V operation, very fast program and read
performance and selective block locking provide a highly flexible memory component suitable for high-density
memory cards, Resident Flash Arrays and PCMCIA-ATA Flash Drives. The DD28F032SA’s dual read voltage
enables the design of memory cards which can be read/written in 3.3 V and 5.0 V systems interchangeably.
Its x8/x16 architecture allows the optimization of memory to processor interface. The flexible block locking
option enables bundling of executable application software in a Resident Flash Array or memory card. The
DD28F032SA will be manufactured on Intel’s 0.6 μm ETOX IV technology.
New Design Recommendations:
For new 3.3 V and 5 V V
CC
designs with this device, Intel recommends using the Intel StrataFlash memory
technology. Reference Intel StrataFlash Technology 32 and 64 Mbit 28F320J5, 28F640J5
datasheet, order
number 290606.
This document is also available at Intel’s website, http://www.intel.com/design/flcomp.
REFERENCE ONLY
32-MBIT FlashFile MEMORY
DD28F032SA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DD311A | Interface IC |
| DD111 | Interface IC |
| DD111M | Interface IC |
| DD211 | Interface IC |
| DD211B | Interface IC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DD28F032SA-070 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile MEMORY |
| DD28F032SA-080 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY |
| DD28F032SA100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| DD28F032SA-100 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY |
| DD28F032SA-150 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY |
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